Surface trap mediated electronic transport in biofunctionalized silicon nanowires

Puppo, Francesca; Traversa, Fabio L.; Ventra, Massimiliano Di; Micheli, Giovanni De; Carrara, Sandro

doi:10.1088/0957-4484/27/34/345503

Cited by 17 publications

(11 citation statements)

References 46 publications

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“…For the first time we implement the hysteresis width as a reliable parameter to control and calibrate the concentration of biomolecules in solution. Interestingly, these observations partially resemble the appearance of a voltage hysteresis in output curves when sweeping source-to-drain voltage V SD upon functionalization with antibodies in silicon nanowire devices that were modelled by a memristor equation, and related to the capacitive effects [39,40]. Finally, we compare the sensing results obtained via quantitative analysis of hysteresis, with the results obtained from the voltage shift dV T in the subthreshold region [41], and demonstrate the qualitative agreement for both methods.…”

Section: Introductionsupporting

confidence: 58%

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

et al. 2018

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Abstract:We present a biosensor chip with integrated large area silicon nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis width of the FET transfer curve as a reliable parameter to quantify the concentration of biomolecules in the solution. We further compare our results to conventional surface potential based measurements and demonstrate that both parameters distinctly respond at a different analyte concentration range. A combination of the two approaches would provide broader possibilities for detecting biomolecules that are present in a sample with highly variable concentrations, or distinct biomolecules that can be found at very different levels. Finally, we qualitatively discuss the physical and chemical origin of the hysteresis signal and associate it with the polarization of thrombin molecules upon binding to the receptor at the nanowire surface.

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Section: Introductionsupporting

confidence: 58%

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

et al. 2018

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“…When I D changes we can determine the sensitivity of the device. So we can understand the performance of the biosensors with different channel width and channel doping to produce it for the future [33].…”

Section: Device Modelling Of the Sinw-fet And Inpnw-fet Biosensormentioning

confidence: 99%

Design and Simulation of InP and Silicon Nanowires With Different Channel Characteristic as Biosensors to Improve Output Sensitivity

nejad¹,

Tahi²,

Rezaie³

2021

Preprint

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This research contains a good comparison among technologies of SiNW-FET/InPNW-FET depending on the size of channel and dopants in channel for biosensing application based on the width and dopants for two types of silicon and InP materials in the nanowire channel. A device numerical modelling tool, Silvaco ATLAS is used in step one to design three p-type SiNW-FET/InPNW-FET biosensors with a channel width of 40 nm, 60 nm and 70 nm for these two types of materials and in step two to design three p-type SiNW-FET/InPNW-FET biosensors with different dopants of 0.1×1014 cm-3, 1×1014 cm-3 and 10×1014 cm-3 for these two types of materials. Their sensing process is depended on the alteration in charge density that causes changing in the electric field at the surface of the SiNW-FET/InPNW-FET. The resistivity of the device is changed when a negatively charged biomolecules species has a chemical reaction with the external surface of a P-type SiNW-FET/InPNW-FET. To investigate the effect of different channel width and dopants on the performance of the SiNW-FET/InPNW-FET biosensor, several negatively interface charge densities, QF (-0.1×1012 cm-2, -0.5×1012 cm-2, and -1×1012 cm-2) are introduced on the surface of the SiNW-FET/InPNW-FET channel to represent as the actual target analytics (DNA) captured by the bioreceptor of the biosensor. Based on the results, these negatively QF attract the hole carriers below the surface of p-type nanowire causes to collect carriers in the channel, and make an increase in the device output ID. Increase of the applied negative charge density has allowed for more ID to flow across the channel between drain and source region. The changes of ID with the applied QF are utilized to determine the sensitivities for all designed biosensor with different channel width and channel dopants. The minimum nanowire width of 40 nm with the minimum nanowire dopants of 0.1×1014 cm-3 for the high sensitivity silicon state of 3.6 μA/cm-2 compared to the indium phosphide state of 2.8 μA/cm-2. So the best performance for detecting the desired analyte in the silicon state with the lowest width and dopant to be seen.

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“…The overall charge accumulated at the gate surface may either deplete the semiconducting SiNW channel from its majority carriers or induce their accumulation depending on its sign and distribution. Although recent findings have highlighted the potential of the memresistive effects of SiNW-FETs in biosensing applications [17], most common characterizations involve measuring the variation in SiNW carrier concentration by proxy of measurable changes in SiNW conductivity using electrical IV instrumentation techniques.…”

Section: System Descriptionmentioning

confidence: 99%

System-Level Sensitivity Analysis of SiNW-bioFET-Based Biosensing Using Lock-In Amplification

et al. 2017

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Abstract-Although Silicon Nanowire biological Field-Effect Transistors (SiNW-bioFETs) have steadily demonstrated their ability to detect biological markers at ultra-low concentration, they have not yet translated into routine diagnostics applications. One of the challenges inherent to the technology is that it requires an instrumentation capable of recovering ultra-low signal variations from sensors usually designed and operated in a highly-resistive configuration. Often overlooked, the SiNWbioFET/instrument interactions are yet critical factors in determining overall system biodetection performances.Here, we carry out for the first time the system-level sensitivity analysis of a generic SiNW-bioFET model coupled to a custom-design instrument based on the lock-in amplifier. By investigating a large parametric space spanning over both sensor and instrumentation specifications, we demonstrate that systemwide investigations can be instrumental in identifying the design trade-offs that will ensure the lowest Limits-of-Detection. The generic character of our analytical model allows us to elaborate on the most general SiNW-bioFET/instrument interactions and their overall implications on detection performances. Our model can be adapted to better match specific sensor or instrument designs to either ensure that ultra-high sensitivity SiNW-bioFETs are coupled with an appropriately sensitive and noise-rejecting instrumentation, or to best tailor SiNW-bioFET design to the specifications of an existing instrument.

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Surface trap mediated electronic transport in biofunctionalized silicon nanowires

Cited by 17 publications

References 46 publications

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

Design and Simulation of InP and Silicon Nanowires With Different Channel Characteristic as Biosensors to Improve Output Sensitivity

System-Level Sensitivity Analysis of SiNW-bioFET-Based Biosensing Using Lock-In Amplification

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