1997
DOI: 10.1557/s109257830000168x
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Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE

Abstract: Heteroepitaxy of hexagonal symmetry materials is more complicated than in the more usual case of cubic systems. In the growth of layers on the (0001) surfaces, the misfit dislocations always exhibit a screw component that leads to rotation of the epilayer in a 3 dimensional growth mode. The size of the islands will depend on many factors among which the substrate surface treatment, prior to growth, may be a predominant one. In this work, a comparative study is carried out for samples grown on plasma treated sa… Show more

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Cited by 14 publications
(1 citation statement)
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“…6, as large as 2a edge component may be exhibited by such defects. In our specimens, it was noticed that these nanopipes were confined inside the first 200 nm of the epitaxial layer [ 27 ], they contain amorphous material in layers grown on 6H-SiC, whereas they are empty on top of sapphire [ 28 ]. Other authors have shown that the pure screw nanopipes cross the entire epitaxial layer [10].…”
Section: Nanopipesmentioning
confidence: 48%
“…6, as large as 2a edge component may be exhibited by such defects. In our specimens, it was noticed that these nanopipes were confined inside the first 200 nm of the epitaxial layer [ 27 ], they contain amorphous material in layers grown on 6H-SiC, whereas they are empty on top of sapphire [ 28 ]. Other authors have shown that the pure screw nanopipes cross the entire epitaxial layer [10].…”
Section: Nanopipesmentioning
confidence: 48%