Surface treatment to improve responsivity of MgZnO UV detectors

Zhao, Yajun; Jiang, Dayong; Liu, Rusheng; Duan, Qian; Tian, Chunguang; Sun, Long; Gao, Shang; Qin, Jieming; Liang, Qingcheng; Zhao, Jianxun

doi:10.1016/j.sse.2015.02.019

Cited by 14 publications

(8 citation statements)

References 15 publications

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“…The detector was compared with other detectors, and the relevant data is shown in Table 1. By comparison with the reference (Zhao et al, 2014), it can be seen that the responsivity of the detector in this paper is far greater than that of the MSM structure detector mentioned in the reference under the same bias voltage, the MSM detectors in some other articles (Wang et al, 2009;Zhao et al, 2015;Zhang W. et al, 2018), even if they work under a relatively high bias voltage, their responsivity is only comparable to the detectors in this article. It should be noted that the responsivity in the above-mentioned articles is the maximum value of its responsivity.…”

Section: Device Performance Measurements Resultsmentioning

confidence: 67%

A Solar-Blind Ultraviolet Photodetector With Graphene/MgZnO/GaN Vertical Structure

et al. 2021

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Graphene (Gr) has high transmittance to ultraviolet (UV) light and high mobility, which can effectively collect and transfer carriers. In this work, MgZnO (MZO) films were grown on the surface of the p-GaN by magnetron sputtering. A heterojunction solar-blind UV detector with Gr/MZO/GaN structure was constructed by introducing Gr as the window layer film. The test results show that the device has excellent detection ability for solar-blind UV light. The light response cut-off edge of the device is 263 nm, under the illumination of 255 nm and the bias voltage of −5 V, the responsivity is 14.6 mA/W, the rise time is 0.79 s, the decay time is 0.2 s, and the external quantum efficiency is 71.1%. The importance of this work lies in providing a reference for the application of Gr-based photodetectors.

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Section: Device Performance Measurements Resultsmentioning

confidence: 67%

A Solar-Blind Ultraviolet Photodetector With Graphene/MgZnO/GaN Vertical Structure

et al. 2021

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“…Wide band gap semiconductor materials are considered to be suitable for solar-blind photodetectors, such as AlN, AlGaN, , ZnMgO, − diamond, cubic BN, and Ga 2 O 3 . − However, a complex buffer layer is needed to reduce the lattice mismatch between the AlGaN film and the substrate. , Although MgZnO has a wide tunable range band gap (3.3–7.8 eV) by adjusting the composition of Mg, the problem of phase segregation at high Mg concentration needs to be further solved. , The band gap of diamond is fixed at 5.5 eV, which limits its detection wavelength range shorter than 225 nm. , Significantly, Ga 2 O 3 with a natural band gap of ∼4.9 eV without the alloying process has the advantages of low cost and excellent chemical and physical stabilities, which make it suitable for solar-blind photodetection. ,,− …”

Section: Introductionmentioning

confidence: 99%

Polycrystalline Ga₂O₃ Nanostructure-Based Thin Films for Fast-Response Solar-Blind Photodetectors

Chen

Zhang

et al. 2022

ACS Appl. Nano Mater.

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Polycrystalline Ga2O3 nanostructure-based thin films were prepared by electron beam evaporation, followed by annealing treatment. The microstructure and optical properties of the unannealed and 800 °C annealed Ga2O3 thin films were characterized. The results showed that the 800 °C annealed Ga2O3 thin films have larger grains and shorter UV absorption wavelength in comparison with the unannealed Ga2O3 thin films. A metal/semiconductor/metal-structured photodetector based on Ga2O3 thin films was fabricated, and the UV photoresponse performances were investigated. The photodetector using an annealed Ga2O3 thin film exhibited low dark current (163 pA @ 0.25 V/μm) and high responsivity rejection ratio (R 254 nm/R 310 nm = 3.2 × 103). Significantly, under 266 nm laser pulse illumination, the annealed Ga2O3 thin-film photodetector shows fast response rise time (16.6 μs) and fall time (196.7 μs), respectively, which are faster than that of most of the reported gallium oxide solar-blind photodetectors. The fast response was attributed to the reduced defect and grain boundaries in the annealed Ga2O3 thin film. This work provides guidelines to the preparation of large-area, low-cost, and high-crystalline Ga2O3 nanostructure-based thin films and is promising to realize high-sensitivity and real-time response solar-blind photodetectors.

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“…Varma et al studied the performance of UV detectors based on ZnO thin‐film Schottky diodes with Au and Pd contacts by RF magnetron sputtering technique 20 . Zhao et al prepared MSM UV detectors based on MgZnO films, showing that the surface treatment of ZnO particles plays a key role in enhancing the responsivity of detector 21 . Xu et al reported ZnO thin film based on MSM UV detector with gold Schottky contact by hydrothermal method, indicating that the performance of the UV device depends on the structure of the ZnO materials 22 .…”

Section: Introductionmentioning

confidence: 99%

Study on the nanoscale current of ZnO film by photoassisted peak force tunnel atomic force: A novel technique for UV detection

Zhang

Dong

Zhao

et al. 2022

Surface & Interface Analysis

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ZnO film-based ultraviolet (UV) detector was fabricated by photoassisted peak force tunnel atomic force (PFTUNA) on fluorine tin oxide (FTO) substrate. The PFTUNA current in dark and in UV light was $0.1 and 2.0 nA, respectively. The UV sensitivity (photocurrent/dark current) is more than 20. The response time and the recovery time are $0.12 and 0.32 s, respectively. The UV sensing mechanism is that the holes will transport to the ZnO surface to capture the adsorbed oxygen ions to weaken the depletion layer under UV illumination. The PFTUNA current between the tip and the ZnO film is consistent with the Richardson-Schottky (RS) thermionic emission model.

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Surface treatment to improve responsivity of MgZnO UV detectors

Cited by 14 publications

References 15 publications

A Solar-Blind Ultraviolet Photodetector With Graphene/MgZnO/GaN Vertical Structure

A Solar-Blind Ultraviolet Photodetector With Graphene/MgZnO/GaN Vertical Structure

Polycrystalline Ga₂O₃ Nanostructure-Based Thin Films for Fast-Response Solar-Blind Photodetectors

Study on the nanoscale current of ZnO film by photoassisted peak force tunnel atomic force: A novel technique for UV detection

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Surface treatment to improve responsivity of MgZnO UV detectors

Cited by 14 publications

References 15 publications

A Solar-Blind Ultraviolet Photodetector With Graphene/MgZnO/GaN Vertical Structure

A Solar-Blind Ultraviolet Photodetector With Graphene/MgZnO/GaN Vertical Structure

Polycrystalline Ga2O3 Nanostructure-Based Thin Films for Fast-Response Solar-Blind Photodetectors

Study on the nanoscale current of ZnO film by photoassisted peak force tunnel atomic force: A novel technique for UV detection

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Polycrystalline Ga₂O₃ Nanostructure-Based Thin Films for Fast-Response Solar-Blind Photodetectors