Surfaces/interfaces of narrow-gap II-VI compounds

Nemirovsky, Y.; Amir, N.

doi:10.1007/978-1-4613-1109-6_10

Cited by 8 publications

(2 citation statements)

References 229 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The DLHJ can be used for nonequilibrium devices having high performance as compared to equilibrium mode devices [1,28]. The influence of surface recombination on the photodiode performance can be prevented by the use of suitable passivation [29][30][31][32][33]. LPE p-on-n DLHJ photodiodes at 10.5 µm give an average R 0 A of 300 cm 2 under a background flux of 2 × 10 12 photons cm −2 s −1 with a breakdown voltage of 600 mV [33] with extremely low 1/f noise (knee frequency < 0.1 Hz at 50 mV reverse bias).…”

Section: Introductionmentioning

confidence: 99%

Plasma induced type conversion in mercury cadmium telluride

Agnihotri¹,

Lee²,

Yang³

2002

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The tunable bandgap semiconductor mercury cadmium telluride (MCT) is by far the most efficient detector in the 3-5 µm mid-wave infrared (MWIR) and 8-14 µm long-wave infrared (LWIR) wave bands. It is the current material of choice for high-performance, low-cost infrared focal plane arrays. The present research effort in MCT is aimed at improving materials and device fabrication technology, to achieve high-temperature operation and multi-colour capability for MCT detectors. Plasma induced type conversion in MCT, as an alternative to ion implantation junction formation technology, has received considerable attention during the past few years. In this review, we discuss the salient features of this technology and we give a comparison of plasma and ion implantation junction formation technologies. The post-implant annealing, necessary in implantation technology to produce high-quality photodiodes, is not needed in plasma technology. The results on MWIR detectors demonstrate a state-of-the-art performance with a zero-bias dynamic resistance-junction area product R 0 A greater than 10 7 cm 2 at 80 K. LWIR diodes have been successfully fabricated by using a hydrogenation process for vacancy doped wafers. An average R 0 A of 50 cm 2 has been reported for these devices. The devices have been found to be stable when baked at 80 • C for ten days.

show abstract

Section: Introductionmentioning

confidence: 99%

Plasma induced type conversion in mercury cadmium telluride

Agnihotri¹,

Lee²,

Yang³

2002

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…This is thus one of the reasons why passivation of the CMT surface is normally carried out prior to further processing. Surface passivation takes several forms [3] and includes the use of SiO 2 by photochemical vapour deposition [4] and ZnS [5] as well as the native anodic oxides [6,7] and sulphides [8,9]. The electrical properties of these layers determine the characteristics of the interfaces so formed, keeping the interface as close to flat band as possible to minimize tunnelling currents [10], reducing the surface recombination velocity [11] as well as leaving a low density of interface states [12].…”

Section: Introductionmentioning

confidence: 99%

Second-harmonic generation in the characterization of surface effects in epitaxial layers

Berlouis

Wark

Cruickshank

et al. 1998

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Second-harmonic (SH) rotational anisotropy measurements performed on epitaxial Cd x Hg 1−x Te (CMT) layers grown on CdTe 111 B substrate exhibits an interference in the SH signal originating from the bulk and from the CMT surfaces. The threefold symmetry of the epilayer was shown to be sensitive to the nature of adsorbed species at the surface when in contact with an electrolyte solution despite the strong SH generation in the bulk of the layer. The modification of the SH response from a non-centrosymmetric semiconducting material to such an extent is unusual since bulk SH generation is considered as the dominant contributor in these instances. The case of CMT is, however, rather specific in that the observed SH signal originates from, at most, only the top 40 nm of the CMT epilayer. This important difference means that surface modification by means of electron donating or withdrawing groups will play a large role in the observed SHG signal.

show abstract