Surfactant effect of Sb on the growth of MnSi 1.7 layers on Si(0 0 1)

Formation of self-assembled Gd2O3nanowire-like structures during epitaxial growth on Si(001)

“…Mogilatenko et al reported about similar structures during the formation of manganese silicide and nickel silicide. 81 The growth has been described by a model, 86 which could also be applied for gadolinium silicide.…”

“…If they reach a step edge or defects, the reaction to form a silicide can start. 86 The formation of silicide islands demands the consumption of silicon from the substrate, which will be taken from the surrounded areas, wherefore the trenches can form. This is also the case for the nanowire-like structures.…”

Anisotropic Thermoelectric Properties of MnSi$_{\gamma}$ Film Prepared on R-Sapphire

“…One way to investigate the anisotropic TE properties is to grow oriented MnSi films. Thus far, MnSi films have been prepared on the oxidized silicon, [12][13][14] Si(111), 15,16) and Si(100) [17][18][19][20] substrates; however, there has been no report on the TE anisotropy of an epitaxial MnSi film due to the some types of domains. To investigate the TE properties in the ab-plane and in the c-axis, the (1000) or (1100) oriented films were desired.…”

“…The MnSi films grown on the Si(100) substrate had the multidomain having a preferential orientation of (1000) or (1100) due to the square surface structure of the substrate. [17][18][19][20] Since the (1000) or (1100) plane of MnSi is rectangular, we expect that the rectangular surface structure of the R-sapphire, i.e., Sapphire(1 " 102), substrate is favorable to obtain the highly-oriented epitaxial MnSi film. In addition, we expect that the temperature gradient is effective to obtain a highly oriented film.…”