Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing

Park, Jea‐Gun; Katoh, Takeo; Lee, Won-Mo; Jeon, Hyeongtag; Paik, Ungyu

doi:10.1143/jjap.42.5420

Cited by 36 publications

(32 citation statements)

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“…Nevertheless, a better understanding of the risks associated with specific nanomaterials may reduce environmental damage or adverse health effects (15,22). While little is known about the environmental fate, transport, and accumulation of CeO 2 nanoparticles, they are produced at industrial scales for use as a diesel fuel additive (typically at a concentration 5 mg/liter) and as a polishing agent (35,37). The emergence of multiple, important applications for CeO 2 nanoparticles and increased industrial production will undoubtedly lead to environmental release of nanoparticles and has prompted increased research into their properties and potential toxicity to biological systems.…”

mentioning

confidence: 99%

Effects of Engineered Cerium Oxide Nanoparticles on Bacterial Growth and Viability

Pelletier

Suresh

Holton

et al. 2010

Appl Environ Microbiol

347

213

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Interest in engineered nanostructures has risen in recent years due to their use in energy conservation strategies and biomedicine. To ensure prudent development and use of nanomaterials, the fate and effects of such engineered structures on the environment should be understood. Interactions of nanomaterials with environmental microorganisms are inevitable, but the general consequences of such interactions remain unclear, due to a lack of standard methods for assessing such interactions. Therefore, we have initiated a multianalytical approach to understand the interactions of synthesized nanoparticles with bacterial systems. These efforts are focused initially on cerium oxide nanoparticles and model bacteria in order to evaluate characterization procedures and the possible fate of such materials in the environment. The growth and viability of the Gram-negative species Escherichia coli and Shewanella oneidensis, a metal-reducing bacterium, and the Gram-positive species Bacillus subtilis were examined relative to cerium oxide particle size, growth media, pH, and dosage. A hydrothermal synthesis approach was used to prepare cerium oxide nanoparticles of defined sizes in order to eliminate complications originating from the use of organic solvents and surfactants. Bactericidal effects were determined from MIC and CFU measurements, disk diffusion tests, and live/dead assays. For E. coli and B. subtilis, clear strain-and size-dependent inhibition was observed, whereas S. oneidensis appeared to be unaffected by the particles. Transmission electron microscopy along with microarray-based transcriptional profiling was used to understand the response mechanism of the bacteria. Use of multiple analytical approaches adds confidence to toxicity assessments, while the use of different bacterial systems highlights the potential wide-ranging effects of nanomaterial interactions in the environment.

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mentioning

confidence: 99%

Effects of Engineered Cerium Oxide Nanoparticles on Bacterial Growth and Viability

Pelletier

Suresh

Holton

et al. 2010

Appl Environ Microbiol

347

213

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“…2 Recent studies on silicon dioxide and silicon nitride CMP using ceria abrasive slurries have focused on the chemical aspect of the polishing process. [3][4][5][6][7] Generally speaking, cerium oxide slurry is a relatively new formulation compared to the more well-known silicaand alumina-based slurries. Compared to the extensive effort spent on the chemical aspects of the ceria abrasive slurry polishing, there is minimal published work on the effect of cerium oxide particle size in dielectric CMP.…”

mentioning

confidence: 99%

Effect of Cerium Oxide Particle Sizes in Oxide Chemical Mechanical Planarization

Sampurno

Sudargho

Zhuang

et al. 2009

Electrochem. Solid-State Lett.

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This study explored the effect of different cerium oxide abrasive particle sizes in chemical mechanical planarization of 200 mm blanket plasma-enhanced tetraethylorthosilicate wafers. All polishing experiments were done with a polisher and tribometer capable of measuring shear force and down force in real-time. Coefficient of friction and removal rate were found to correlate well with the slurry median particle size distribution. Removal rate modeling based on particle size was explored to support the interpretation of the experimental results.Shallow trench isolation ͑STI͒ is the preferred method of isolation for high-volume integrated circuit ͑IC͒ manufacturing with active device features in the deep submicrometer regime. During IC fabrication, STI incorporates silicon dioxide as the insulator and silicon nitride as the stopping layer. 1 In STI chemical mechanical planarization ͑CMP͒, cerium-oxide-based slurries are commonly used due to their high oxide-to-nitride removal rate selectivity. 2 Recent studies on silicon dioxide and silicon nitride CMP using ceria abrasive slurries have focused on the chemical aspect of the polishing process. 3-7 Generally speaking, cerium oxide slurry is a relatively new formulation compared to the more well-known silicaand alumina-based slurries. Compared to the extensive effort spent on the chemical aspects of the ceria abrasive slurry polishing, there is minimal published work on the effect of cerium oxide particle size in dielectric CMP.This paper investigates the coefficient of friction ͑COF͒ and removal rate of 200 mm blanket plasma-enhanced tetraethylorthosilicate ͑PETEOS͒ wafers using cerium-oxide-based slurries having four different particle size distributions. Wafers were polished using Araca APD-500 polisher and tribometer to measure the shear force and down force in real-time. Removal rate and COF of each slurry are then analyzed. Furthermore, removal rate modeling based on elastic-plastic microcontact mechanics and abrasive wear theory is explored to help interpret the experimental results. ExperimentalFour cerium-oxide-based slurries with different particle sizes ͑summarized in Table I͒ were used to polish 200 mm blanket PETEOS wafers. D 50 and D 99 are defined as the size of the particle on the 50th and 99th percentiles of the total solid weight fraction, respectively. In all cases, the fraction of solid weight content of all slurries, X w , was 0.01. Polishing was performed on the Araca APD-500 polisher, which was capable of measuring friction force and actual down force in real-time during polishing. The polisher and its associated accessories have been described in detail elsewhere. 1,8 In this study, the data acquisition rate for shear force and down force measurement was set at 1000 Hz. For each slurry, five blanket PETEOS wafers were polished for 1 min on a 500 mm IC1000 A2 concentric groove pad manufactured by Rohm and Haas Electronic Materials. Polishing pressure and sliding velocity were kept constant at 3 psi and 1.37 m/s ͑a combination of 93 rpm for the ...

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“…In STI CMP it is important to modulate the selectivity between oxide and nitride in order to effectively stop at the nitride layer and control the oxide dishing. One approach to control the selectivity is to specifically modify the surface of the abrasive or the substrate [66]. Under most STI CMP operating conditions, both silicon dioxide abrasive and substrate filmscarry negative charge, while silicon nitride surface is positively charged.…”

Section: Surface Modification Of Wafer Surfacementioning

confidence: 99%

Key Chemical Components in Metal CMP Slurries

Cheemalapati

Keleher

2007

Microelectronic Applications of Chemical Mechanical Planarization

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Chemical-mechanical planarization (CMP) slurries can be classified into two general categories according to their applications: metal CMP slurry and nonmetal CMP slurry. Two most important metals incorporated into IC chip manufacturing via CMP are W and Cu. Depending upon integration schemes, a metal CMP slurry may or may not carry out the function of removing the film(s) immediately below the overburden metal such as cap, adhesion, and barrier layers. For tungsten CMP, a single-step slurry is typically used to remove both excess tungsten and its barrier/adhesion layer. For copper CMP, after the removal of copper, a subsequent barrier removal step is often required. This chapter reviews the basic requirements for the key components found in common metal slurries.It is generally understood that a metal CMP slurry chemically modifies the surface to be polished and yields a softer and porous complex layer, which is then removed by mechanical force in the process. Although these metals may differ in their physical and chemical properties, the underlying principle for the design of slurries is the same. A production-worthy metal CMP slurry must address several issues, such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), step height reduction efficiency, dishing/erosion, minimum ILD loss, corrosion, scratching, slurry residue, and other surface defects. Typical metal CMP slurry may contain an oxidant, a chelating agent, abrasive particles, a surfactant, and other additives. These components must work in concert to produce adequate material removal rate, high planarization efficiency, and Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing

Cited by 36 publications

References 0 publications

Effects of Engineered Cerium Oxide Nanoparticles on Bacterial Growth and Viability

Effects of Engineered Cerium Oxide Nanoparticles on Bacterial Growth and Viability

Effect of Cerium Oxide Particle Sizes in Oxide Chemical Mechanical Planarization

Key Chemical Components in Metal CMP Slurries

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