Surfactant mediated growth of MnSi1.7 on Si(001)

Abstract

Sb is used as a surfactant for the growth of MnSi1.7 by reactive deposition of Mn on Si(001). It is found that the presence of Sb during the growth strongly increases the island density and changes the crystalline orientation of the MnSi1.7. The morphology and structure of the resulting silicide are the same both for the deposition of Mn only on a Sb-terminated Si(001) surface and for the codeposition of Mn and Sb on Si(001). A residual Sb coverage close to one monolayer at the sample surface has been determined for both of the preparation conditions.

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

“…Combining TMPs with Si and Ge would enable a wider range of hybrid spintronic devices to be developed, directly integrated with the dominant semiconductor materials systems used in conventional nanoelectronics. However, there have been relatively few studies of TMP epitaxial growth on Si, 13 − 15 and we are aware of none on Ge. Room temperature spin transport in Si with spin diffusion lengths more than 100 nm has been established, 16 , 17 and similarly efficient spin transport at 300 K in Ge has also been demonstrated.…”

“…Combining TMPs with Si and Ge would enable a wider range of hybrid spintronic devices to be developed, directly integrated with the dominant semiconductor materials systems used in conventional nanoelectronics. However, there have been relatively few studies of TMP epitaxial growth on Si, − and we are aware of none on Ge. Room temperature spin transport in Si with spin diffusion lengths more than 100 nm has been established, , and similarly efficient spin transport at 300 K in Ge has also been demonstrated. , One advantage of Ge over Si (and GaAs) is its higher hole mobility: matching to a p-type ferromagnetic spin injection contact such as MnSb is therefore a natural choice for investigating and exploiting spin-polarized hole transport in semiconductors.…”

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

“…There are many known effects of surfactants. For example, it was shown for both metallic 1-3 and semiconductor 1,2,4-8 systems that surfactants can enhance two-dimensional (2D) growth, 1,2,7,8 prevent three-dimensional (3D) islanding, 2,6,8 improve bulk crystalline quality, 4,8 increase step velocity, 6 reduce atom surface diffusion, 3 change the crystalline orientation, 1 as well as suppress the coalescence, 5 increase the density, 1 and improve the size uniformity 5 of islands. Most studies of the effects of surfactants have been carried out during molecular beam epitaxy (MBE) or metal organic vapor phase epitaxy (MOVPE), while the role of surfactant elements during chemical vapor deposition (CVD) is still largely unknown.…”

On the stability of the Higher Manganese Silicides

“…In previous studies, HMS has been successfully synthesized using different methods: solid phase reaction, sputtering, reactive deposition epitaxy, and chemical reaction [4][5][6][7]. However, there are some disagreements in the reported physical properties of HMS [8], and it was suggested that these discrepancies come from the subtle structural differences in the complex crystal structures of HMS [6].…”