2018
DOI: 10.7567/jjap.57.07mg01
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Survey of critical failure events in on-chip interconnect by fault tree analysis

Abstract: In this paper, a framework based on reliability physics is proposed for adopting fault tree analysis (FTA) to the on-chip interconnect system of a semiconductor. By integrating expert knowledge and experience regarding the possibilities of failure on basic events, critical issues of on-chip interconnect reliability will be evaluated by FTA. In particular, FTA is used to identify the minimal cut sets with high risk priority. Critical events affecting the on-chip interconnect reliability are identified and discu… Show more

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Cited by 4 publications
(5 citation statements)
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“…24,25) The binding energies of 286-286.8 and 287-287.8 are corresponded to the bonding of sp 2 C-N and sp 3 C-N, respectively. 26,27) Most N atoms are bound to sp 2 C rather than sp 3 C atoms due to the lower formation energy. 28) For the lowest N-doping (a-C:N 90:10), C-C bonds from sp 2 and sp 3 are still be the dominant composition in C 1 s spectra.…”
Section: Experimental Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…24,25) The binding energies of 286-286.8 and 287-287.8 are corresponded to the bonding of sp 2 C-N and sp 3 C-N, respectively. 26,27) Most N atoms are bound to sp 2 C rather than sp 3 C atoms due to the lower formation energy. 28) For the lowest N-doping (a-C:N 90:10), C-C bonds from sp 2 and sp 3 are still be the dominant composition in C 1 s spectra.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…1,2) Therefore, the reliability of Cu metallization became a serious concern to maintain the conductive property. [3][4][5][6][7] For instance, surface of Cu bond pad, which is such a critical part, must have additional materials to prevent an inherent issue of Cu oxidation during operating in ambient moisture.…”
Section: Introductionmentioning
confidence: 99%
“…Cu bonding pads have been considered the critical parts for Cu-oxide formation because they were primarily exposed to air during the wire bonding process and moisture may probably diffuse through the package to oxidize the Cu pads during operation, leading to the failures of the electrical connection or resistance increase. [17][18][19] Applying an appropriate barrier coated on the Cu surface is a potential method to avoid Cu oxidation. However, wire-bondability on the coated Cu should be confirmed for the application.…”
Section: Introductionmentioning
confidence: 99%
“…6,7) In the long-term storage, reliability against moisture is considered as one of the critical issues for metallization. 8) To test the reliability against moisture, temperature humidity storage (THS) tests have been adopted, and the lifetime has been predicted by the Peck's model. [9][10][11][12][13] The lifetime prediction models are mostly based on the test results for Al-based metallization, however, the prediction model for Cu-based metallization is still lacking.…”
Section: Introductionmentioning
confidence: 99%