“…The motivating problem for our investigation is the reactive infiltration of molten silicon (Si) into carbon (C) (Bougiouri, Voytovych, Rojo-Calderon, Narciso, & Eustathopoulos, 2006;Dezellus & Eustathopoulos, 2010;Dezellus, Hodaj, & Eustathopoulos, 2003;Einset, 1996Einset, , 1998Eustathopoulos, Nicholas, & Drevet, 1999;Hillig, Mehan, Morelock, DeCarlo, & Laskow, 1975;Israel et al, 2010;Liu, Muolo, Valenza, & Passerone, 2010;Messner 302 D. Sergi et al & Chiang, 1990;Mortensen, Drevet, & Eustathopoulos, 1997;Voytovych, Bougiouri, Calderon, Narciso, & Eustathopoulos, 2008). This process is of particular relevance to industrial practices which involve the processing of carbon and graphite materials (Gadow, 2000;Gadow & Speicher, 2000;Krenkel, 2005;Paik et al, 2002;Salamone, Karandikar, Marshall, Marchant, & Sennett, 2008).…”