Suspended MoS₂ Photodetector Using Patterned Sapphire Substrate

Abstract

The introduction of patterned sapphire substrates (PSS) has been regarded as an effective method to improve the photoelectric performance of 2D layered materials in recent years. Molybdenum disulfide (MoS2), an intriguing transition metal 2D materials with splendid photoresponse owing to a direct‐indirect bandgap transition at monolayer, shows promising optoelectronics applications. Here, a large‐scale, continuous multilayer MoS2 film is prepared on a SiO2/Si substrate and transferred to flat sapphire substrate and PSS, respectively. An enhanced dynamic distribution of local electric field and concentrated photon excitons across the interface between MoS2 and patterned sapphire substrates are revealed by the finite‐difference time‐domain simulation. The photoelectric performance of the MoS2/PSS photodetector is improved under the three lasers of 365, 460, and 660 nm. Under the 365 nm laser, the photocurrent increased by 3 times, noise equivalent power (NEP) decreases to 1.77 × 10−14 W/Hz1/2 and specific detectivity (D*) increases to 1.2 × 1010 Jones. Meanwhile, the responsivity is increased by 7 times at 460 nm, and the response time of the MoS2/PSS photodetector is also shortened under three wavelengths. The work demonstrates an effective method for enhancing the optical properties of photodetectors and enabling simultaneous detection of broad‐spectrum emissions.

Ultrasensitive Solar‐Blind Ultraviolet Photodetector Based on FePSe3/MoS2 Heterostructure Response to 10.6 µm

“…The typical n-type 2D layered material MoS 2 and perovskite heterocrystals were widely investigated and exhibited high-performance photoresponse in the visible range. [29][30][31][32] 2D van der Waals (vdW) p-n junction can be obtained based on FePS 3 and MoS 2 .…”

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction

“…According to the responsivity results shown in Figure S6, values of D* at a frequency of 1 Hz with different gate voltages and incident light powers are calculated in the range of 10 11 to 10 13 Jones for the dual-channel devices (Figure c). D* increases by increasing the gate voltage and reducing the light power density, and the highest D * value at V GS = 30 V under the light power density of 3.2 μw/cm 2 is 2–3 orders higher than that of intrinsic MoS 2 . − Therefore, the vertical dual-channel p-n homojunction device realized by the N 2 plasma doping has delivered a remarkable detectivity for sensitive photodetection.…”

Energy‐Band Engineering by Remote Doping of Self‐Assembled Monolayers Leads to High‐Performance IGZO/p‐Si Heterostructure Photodetectors

“…With the advances in emerging technology for image analysis in fields such as autonomous driving, [ 1 ] artificial intelligence, [ 2 ] medical imaging, [ 3 ] and augmented reality, [ 4 ] development of high‐resolution image sensors has attracted a lot of attention in order to transmit accurate color information. To implement high‐performance photodetectors that meet the performance requirements of the abovementioned applications, research efforts are accelerating on the utilization of emerging semiconductor materials (such as metal oxides, [ 5 ] transition metal dichalcogenides, [ 6 ] perovskites, [ 7 ] and other organic materials [ 8 ] ) accompanied by nanotechnology.…”

“…

high-resolution image sensors has attracted a lot of attention in order to transmit accurate color information. To implement highperformance photodetectors that meet the performance requirements of the abovementioned applications, research efforts are accelerating on the utilization of emerging semiconductor materials (such as metal oxides, [5] transition metal dichalcogenides, [6] perovskites, [7] and other organic materials [8] ) accompanied by nanotechnology.Metal oxide semiconductors (MOSs) is a potential candidate for resolving the existing needs from advanced photodetectors: large-area synthesis, a low-temperature process, and compatibility with conventional fabrication equipment. Owing to the abovementioned attributes of the MOS, photoconductive-, photogating-, photodiode-, or phototransistor-type detectors using various combinations of metal oxides (including ZnO, [9] AuO, [10] SnO 2 , [11] CuO, [12] and ZnSnO, [13] and indium-gallium-zinc oxide (IGZO) [14] ) are being developed extensively.

…”