Swift heavy ion irradiation-induced phase transformation in oxide materials

Mishra, N. C.

doi:10.1080/10420150.2011.578637

Cited by 7 publications

(2 citation statements)

References 44 publications

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“…So, the whole ion–matter interaction is a multivariate multiphysics problem that becomes much more complex when it comes to irradiating crystalline materials. In addition to all of these phenomena, surprisingly, the crystalline materials have been known to change to a different crystal phase after irradiation [ 62–64 ] and such transition is observed in our case. Experiments suggest that ion irradiation is also a stabilizing process for such a phase transition.…”

Section: Discussionmentioning

confidence: 57%

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Simon

Jones

Sakaguchi

et al. 2020

Physica Status Solidi (b)

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Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass‐forming region is a potential candidate for high‐temperature and high‐radiation phase change applications. Herein, the concept of employing Ge x Se100−x glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈1014 cm−2) on the Ge x Se100−x (x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X‐ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic‐GeSe2 crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge40Se60 is also shown as an example.

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Section: Discussionmentioning

confidence: 57%

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Simon

Jones

Sakaguchi

et al. 2020

Physica Status Solidi (b)

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“…[21] Achieving the structural phase transition with assistance of SHI irradiation is one of the unique approaches, and it has been demonstrated for different oxide-based materials. [22,23] It was summarized in a review report that the ferroelectric properties of materials could be modified with energetic ion irradiation by the creation of structural distortion or disorder and defects in the target system for memory applications, which significantly influenced the remanent polarization and leakage current density. Similarly, the piezoelectric and dielectric properties of multifunctional oxide materials can also be tuned by the irradiation-induced defects (point, columnar, cluster, etc.)…”

Section: Introductionmentioning

confidence: 99%

Influence of 120 MeV Au Ion Irradiation on Phase Transition, Surface, and Optical Properties of Lead‐Free (K,Na)NbO₃ Films

Shyam

Negi

Shekhawat

et al. 2023

Physica Status Solidi (a)

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High energy ion beam irradiation is an important tool to engineer the properties of multifunctional materials for diverse applications. The present study reports the impact of 120 MeV Au ion beam irradiation on structural and luminescence properties of (K,Na)NbO3 (KNN) films. The increase in ion fluence has resulted in crystalline‐to‐crystalline and crystalline‐to‐amorphous phase transitions at room temperature. The dense grain‐like morphology of crystalline films gets transformed into clusters of nano‐sized grains after irradiation, and the grain boundaries are diffused at higher fluence. X‐ray photoelectron spectroscopy results indicate the evaporation of K‐species from the surface after irradiation. The relative elemental ratio and film's thickness were estimated using Rutherford backscattering spectrometry, and subsequently, KNN/Si interface analysis was also carried out. The increase in optical band gap after irradiation is correlated to the suppression of extended band tails. An intense photoluminescence emission in the UV region is observed, and the intensity increases abruptly after the crystalline‐to‐amorphous phase transition, where the grain boundaries merge with nearby ones. The impact of high electronic energy loss in KNN enhanced the probability of radiative recombination. The obtained results demonstrate the possible use of KNN for optoelectronic applications.

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Comparison of Properties of Pristine and 200 MeV Ag15+ Ions Irradiated ‘Li’ 3 wt% Doped V2O5 Thin Films

Kovendhan

Joseph

Manimuthu

et al. 2013

Trans Indian Inst Met

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Swift heavy ion irradiation-induced phase transformation in oxide materials

Cited by 7 publications

References 44 publications

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Influence of 120 MeV Au Ion Irradiation on Phase Transition, Surface, and Optical Properties of Lead‐Free (K,Na)NbO₃ Films

Comparison of Properties of Pristine and 200 MeV Ag15+ Ions Irradiated ‘Li’ 3 wt% Doped V2O5 Thin Films

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Swift heavy ion irradiation-induced phase transformation in oxide materials

Cited by 7 publications

References 44 publications

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Influence of 120 MeV Au Ion Irradiation on Phase Transition, Surface, and Optical Properties of Lead‐Free (K,Na)NbO3 Films

Comparison of Properties of Pristine and 200 MeV Ag15+ Ions Irradiated ‘Li’ 3 wt% Doped V2O5 Thin Films

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Influence of 120 MeV Au Ion Irradiation on Phase Transition, Surface, and Optical Properties of Lead‐Free (K,Na)NbO₃ Films