Swift Heavy Ion Irradiation of Crystalline Insulators and Metals

Thomé, L.

doi:10.1007/978-3-319-33561-2_8

Cited by 1 publication

(2 citation statements)

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“…TEM), as well as quantifying the size of continuous ion tracks in the presence of high pre-existing damage levels. It should also be mentioned that indirect methods are particularly useful for determining S e th values, which are difficult to assess by TEM [60] because track radii are often lower than 2 nm for low S e values and are obscured by the presence of high pre-damage levels, such as in the present study. Therefore, a direct-impact model [61,62] is utilized to describe the increase in relative disorder at constant depth with increasing ion fluence for both 18 MeV Si and 91.6 MeV Xe ions.…”

Section: Discussionmentioning

confidence: 76%

“…Consequently, the S e -induced formation of continuous or discontinuous amorphous ion tracks is the primary process responsible for the enhanced disordering rate in KTaO 3 with pre-existing damage. It is well established [27,60] that indirect methods (i.e. RBS/C) are more powerful in quantifying the size of discontinuous ion track than direct observation methods (i.e.…”

Section: Discussionmentioning

confidence: 99%

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Near-surface modification of defective KTaO₃ by ionizing ion irradiation

Velişa¹,

Zarkadoula²,

Iancu³

et al. 2021

J. Phys. D: Appl. Phys.

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The synergistic effect of nuclear (S n) and electronic (S e) energy loss observed in some ABO3 perovskites has attracted considerable attention due to the real possibility to modify various near-surface properties, such as the electronic and optical properties, by patterning ion tracks in the defective near-surface regions. In this study, we show that low-energy ion-induced disordering in conjunction with ionizing ion irradiation (18 MeV Si, 21 MeV Ni and 91.6 MeV Xe) is a promising approach for tailoring ion tracks in the near-surface of defective KTaO3. Experimental characterization and computer simulations reveal that the size of these latent ion tracks increases with S e and level of pre-existing damage. These results further reveal that the threshold S e value (S e th) for track creation increases with decreasing pre-damage level. The values of S e th increase from 5.02 keV nm−1, for a pre-existing fractional disorder of 0.53 in KTaO3, to 10.81 keV nm−1 for pristine KTaO3. Above these thresholds, amorphous latent tracks are produced due local melting and rapid quenching. Below a disorder fraction of 0.08 and S e ⩽ 6.68 keV nm−1, the synergistic effect is not active, and damage accumulation is suppressed due to a competing ionization-induced damage annealing process. These results indicate that, depending on S e and the amount of pre-existing damage, highly ionizing ions can either enhance or suppress damage accumulation in KTaO3, thus providing a pathway to tailoring defects states. Comprehending the conflicting roles of highly ionizing ions in defective ABO3 oxides is vital for understanding and predictive modeling of ion-solid interactions in complex oxides, as well as for achieving control over ion track size in the near-surface of defective KTaO3.

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Section: Discussionmentioning

confidence: 76%

Section: Discussionmentioning

confidence: 99%