Switching an electrical current with atoms: the reproducible operation of a multi-atom relay

Xie, Fangqing; Obermair, Christian; Schimmel, Thomas

doi:10.1016/j.ssc.2004.08.024

Cited by 18 publications

(19 citation statements)

References 22 publications

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“…To fabricate the initial atomic-scale contact we deposit silver within a narrow gap between two macroscopic gold electrodes (gap width: typically 50 nm) by applying an electrochemical potential of 10-40 mV to a gate electrode [7]. e gold electrodes are covered with an insulating polymer coating except for the immediate contact area, and serve as electrochemical working electrodes.…”

Section: Switching An Atommentioning

confidence: 99%

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confidence: 99%

“…e quantum nature of the electron is directly observable in a size range where the width of the contacts is comparable to the Fermi wavelength of the electrons, and conductance is quantized in multiples of 2e 2 /h for ballistic transport through ideal junctions [2]. In metallic point contacts, which have been fabricated by mechanically controlled deformation of thin metallic wires [2][3][4] and electrochemical fabrication techniques [1,[5][6][7], the conductance depends on the chemical valence [2,3]. Two-terminal conductance-switching devices based on quantum point contacts were developed both with an STM-like setup [8] and with electrochemical methods [9].…”

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confidence: 99%

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The Single-Atom Transistor: perspectives for quantum electronics on the atomic-scale

2010

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ascinating physical properties and technological perspectives have motivated investigation of atomic-scale metallic point contacts in recent years [1][2][3][4][5][6][7][8][9][10]. e quantum nature of the electron is directly observable in a size range where the width of the contacts is comparable to the Fermi wavelength of the electrons, and conductance is quantized in multiples of 2e 2 /h for ballistic transport through ideal junctions [2]. In metallic point contacts, which have been fabricated by mechanically controlled deformation of thin metallic wires [2][3][4] and electrochemical fabrication techniques [1,[5][6][7], the conductance depends on the chemical valence [2,3]. Two-terminal conductance-switching devices based on quantum point contacts were developed both with an STM-like setup [8] and with electrochemical methods [9].In our new approach, a three-terminal, gate-controlled atomic quantum switch was fabricated by electrochemical deposition of silver between two nanoscale gold electrodes (see Fig. 1) [1,6]. A comparison of the experimental data with theoretical calculations indicates perfect atomic order within the contact area without volume or surface defects [10]. Switching an atomWe control individual atoms in the quantum point contact by a voltage applied to an independent gate electrode, which allows a reproducible switching of the contact between a quantized conducting "on-state" and an insulating "off-state" without any mechanical movement of an electrode (see Fig. 2). EPN 41/4 25Controlling the electronic conductivity on the quantum level will impact the development of future nanoscale electronic circuits with ultralow power consumption. Here we report about the invention of the single-atom transistor, a device which allows one to open and close an electronic circuit by the controlled and reproducible repositioning of one single atom. It opens intriguing perspectives for the emerging fields of quantum electronics and logics on the atomic scale.

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Section: Switching An Atommentioning

confidence: 99%

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The Single-Atom Transistor: perspectives for quantum electronics on the atomic-scale

2010

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“…Silver atomic-scale transistors that operate in an aqueous nitric electrolyte at voltages in the millivolt range were previously demonstrated [18–22]. Here, we report our progress in the development of an atomic-scale transistor with a copper quantum point contact as switching block.…”

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confidence: 91%

Copper atomic-scale transistors

Xie

Kavalenka²,

Röger³

et al. 2017

Beilstein J. Nanotechnol.

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We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (U bias) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G 0 (G 0 = 2e2/h; with e being the electron charge, and h being Planck’s constant) or 2G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

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“…13,14 Due to their unusual characteristics, ASJs are of interest in several lab-on-a-chip applications such as atomic-scale transistors 15,16 and multiatom relays. 8 Moreover, the large conductance change due to molecular adsorption in the ballistic transport regime makes ASJs sensitive to molecular adsorption. 6,17À19 To date, several approaches have been reported to fabricate ASJs.…”

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confidence: 99%

Robust Au–Ag–Au Bimetallic Atom-Scale Junctions Fabricated by Self-Limited Ag Electrodeposition at Au Nanogaps

Hwang

Bohn

2011

ACS Nano

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Atom-scale junctions (ASJs) exhibit quantum conductance behavior and have potential both for fundamental studies of adsorbate-mediated conductance in mesoscopic conductors and as chemical sensors. Electrochemically fabricated ASJs, in particular, show the stability needed for molecular detection applications. However, achieving physically robust ASJs at high yield is a challenge because it is difficult to control the direction and kinetics of metal deposition. In this work, a novel electrochemical approach is reported, in which Au-Ag-Au bimetallic ASJs are reproducibly fabricated from an initially prepared Au nanogap by sequential overgrowth and self-limited thinning. Applying a potential across specially prepared Au nanoelectrodes in the presence of aqueous Ag(I) leads to preferential galvanic reactions resulting in the deposition of Ag and the formation of an atom-scale junction between the electrodes. An external resistor is added in series with the ASJ to control self-termination, and adjusting solution chemical potential (concentration) is used to mediate self-thinning of junctions. The result is long-lived, mechanically stable ASJs that, unlike previous constructions, are stable in flowing solution, as well as to changes in solution media. These bimetallic ASJs exhibit a number of behaviors characteristic of quantum structures, including long-lived fractional conductance states, that are interpreted to arise from two or more quantized ASJs in series.

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Switching an electrical current with atoms: the reproducible operation of a multi-atom relay

Cited by 18 publications

References 22 publications

The Single-Atom Transistor: perspectives for quantum electronics on the atomic-scale

The Single-Atom Transistor: perspectives for quantum electronics on the atomic-scale

Copper atomic-scale transistors

Robust Au–Ag–Au Bimetallic Atom-Scale Junctions Fabricated by Self-Limited Ag Electrodeposition at Au Nanogaps

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