Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO

Moazzeni, Alireza; Hamedi, Samaneh; Kordrostami, Zoheir

doi:10.1016/j.sse.2021.108208

Cited by 17 publications

(11 citation statements)

References 58 publications

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“…The switching between the HRS and LRS of the device is attributed to the breakdown of the MSM structure and the formation of a conductive filament by the diffusion of the top electrode metal ions (Ag + ) in the MoSe 2 active layer. In addition, the bipolar resistive switching behavior during the set and reset processes suggests that charge species movement influences the formation of a conductive filament and its subsequent annihilation. , To further elucidate the switching mechanism, the I–V curve during the SET process was analyzed with a double logarithmic plot, as shown in Figure S14 (Supporting Information), where the slope of the I–V curves indicates that the charge migration is consistent with the trap-controlled space charge limited conduction (SCLC) model . At the beginning of the HRS, I ∝ V 1.1 , suggesting ohmic conduction.…”

Section: Resultsmentioning

confidence: 99%

In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

Bala

Pujar

et al. 2023

ACS Nano

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Two-dimensional (2D) materials are favorable candidates for resistive memories in high-density nanoelectronics owing to their ultrathin scaling and controllable interfacial characteristics. However, high processing temperatures and difficulties in mechanical transfer are intriguing challenges associated with their implementation in large areas with crossbar architecture. A high processing temperature may damage the electrical functionalities of the bottom electrode, and mechanical transfer of 2D materials may introduce undesirable microscopic defects and macroscopic discontinuities. In this study, an in situ fabrication of an electrode and 2Dmolybdenum diselenide (MoSe 2 ) is reported. The controlled diffusion of selenium (Se) in the predeposited molybdenum (Mo) produces Mo//Mo:Se stacks with a few layers of MoSe 2 on top and MoSe x on the bottom. Diffusion-assisted Mo//Mo:Se fabrication is observed over a large area (4 in. wafer). Additionally, a 5 × 5 array of crossbar memristors (Mo//Mo:Se//Ag) is fabricated using the diffusion of Se in patterned Mo. These memristors exhibit a small switching voltage (∼1.1 V), high endurance (>250 cycles), and excellent retention (>15 000 s) with minimum cycle-to-cycle and device-to-device variation. Thus, the proposed nondestructive in situ technique not only simplifies the fabrication but also minimizes the number of required stages.

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Section: Resultsmentioning

confidence: 99%

In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

Bala

Pujar

et al. 2023

ACS Nano

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“…It is worth noting that the material of the top electrode greatly impacts the performance of resistive switching. , The authors in ref point out the influence of Al on resistive switching of GO. Also, various compositions of GO with metal oxides like ZnO, TiO 2 , , or organics such as polymers (PEDOT:PSS) are explored. In most of the mentioned works, researchers have implemented the spin coating method for the deposition of GO thin films on their substrate.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Moazzeni

Madvar

Hamedi

et al. 2023

ACS Appl. Nano Mater.

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Recently, resistive switching memory (RRAM) has been attractive for implementing electronic synapses in neural networks and high-density memory technology. In this paper, we report a different technique for fabricating an Al/GO/ITO RRAM device with multilevel storage capability. In this work, graphene oxide (GO) thin films have been deposited by the spray pyrolysis technique (SPT) using GO powder synthesized by chemical oxidation of graphite flakes via the modified Hummers method. The fabricated RRAM shows good switching performance between On and Off states with the best memory window of 20 and presents reliable retention characteristics of 10 4 s and 50 reproducible write−read DC cycles without degradation. The multilevel feature points out five stable multiresistant states obtained with the variation of the compliance current (I cc ) and reset voltage amplitude. The successful longterm potentiation and depression with 10 ms pulse operation allows to apply this memory in neuromorphic computing applications in addition to 11 gradual conductance levels achieved by continuous set and reset cycles. A comparison of the efficiency of SPT with that of the typical spin coating method showed a notable (87%) yield achieved by SPT. The combination of the multilevel capacity of fabricated RRAMs with SPT was exploited to suggest that GO-based RRAMs have the potential to be used as multibit GO memristors and electronic synapse devices for emerging neuromorphic chips. In addition, this work paves the way for the fabrication of solution-based, low-cost, simple and large-scale GO memristors for future electronics.

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“…Accordingly, the physical properties of a resistive switching layer usually determine the entire device’s performance, and optimization of the resistive switching layer is a key challenge in improving the performance. Various materials have been tested as the resistive switching layer, including metal oxides, organic compounds, − and hybrid materials, − with broad prospects for future applications and deeper understanding of each internal mechanism of devices. In addition to the proper selection of a material, the fabrication of its high-quality films is another important aspect in the development of this kind of capacitor-like device.…”

Section: Introductionmentioning

confidence: 99%

Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory

Zhang,

Komatsu,

Maruyama

et al. 2023

ACS Appl. Mater. Interfaces

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In this study, we propose the use of an ionic liquid crystal (ILC) as a new resistive switching layer in nonvolatile resistive random-access memory (ReRAM) devices. The high-quality vacuum-deposited ILC films of 1-hexadecyl-3-methylimidazolium hexafluorophosphate ([C16mim][PF6]) enabled to demonstrate the first operation of ReRAM devices with a low set voltage of ∼1 V and stable switching behavior for up to ∼44 cycles. The key to the successful operation is that the ILC layer is in the liquid crystal phase (smectic A), where the electric double layers formed at the electrode-ILC interfaces play a significant role. The results of basic electrical properties and I–V curve fittings suggested the following operation principle: the formation and rupture of charge-composed filaments within the ILC film, where the current conduction is primarily governed by the trap charge limited current (TCLC) mechanism. These achievements will pave the way for advanced studies of ILC-based electronic devices.

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Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO

Cited by 17 publications

References 58 publications

In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory

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