Switching characteristics of a diamond Schottky barrier diode

Abstract

Abstract:The static current-voltage (I-V) characteristics of a diamond Schottky barrier diode (SBD) have been previously studied. This paper experimentally studies the switching characteristics of a diamond SBD in comparison with the characteristics of a silicon carbide (SiC) SBD. The forward conduction current and the reverse bias voltage dependency of the reverse recovery phenomenon during the fast-switching operation of an SBD are evaluated. The experimental results validate the majority carrier device characteristics of the diamond SBD under study. The results indicate the feasibility of using a diamond device in a power conversion circuit. Keywords: diamond Schottky barrier diode, switching characteristics, diamond semiconductor Classification: Electron devices, circuits, and systems References[1] A. R. Hefner, et al., "SiC power diodes provide breakthrough performance for wide range of applications,"

High temperature switching operation of a power diamond Schottky barrier diode

“…3 shows the switching behavior of the developed diamond SBD in turnoff operation. The evaluation was performed for the experimental result that was obtained using the double pulse measurement method [6]. Figs.…”

“…Reference [4,5] reported the static rectification characteristics of the p-type diamond Schottky barrier diode (SBD) and its temperature dependency; however, it did not evaluate the dynamic switching characteristics. The authors reported the dynamic switching characteristics of high voltage diamond SBD at room temperature in reference [6], but the conduction current was small (∼100 mA) because of the small active area of the device. Recently, the authors developed a high voltage (200 V) and high current (0.8 A) p-type diamond SBD with a relatively large active area.…”

Diamond high-power and high-temperature SBDs

“…Up to now, high power (> 10kV [2], > 4kA/cm 2 [3]) or high temperature (>1000 o C [4], 1500hrs@400 o C [5]) Schottky barrier diodes (SBDs) have been demonstrated on single crystalline diamond. The fast switching characteristics, owing to the low dielectric constant of diamond, has been also reported [6]. Recently, the size of diamond wafer is increased more than 1 inch [7] and the quantitative analysis of residual defects has been carried out.…”

Study of single crystal diamond schottky barrier diodes for power electronics applications

“…While there are few experimental works on the transient characteristics of diamond SBD reported in the literature [53,54,85], there is no reported study on the transient characteristics of diamond m-i-p+ diode up to this date. In this section, we present analysis, modelling, and simulations of the transient characteristics of the diamond diodes using the double-pulse test method shown in Figure 4-22 [53,54,85]. The transient simulations were conducted using TCAD Sentaurus software in the mixed-mode environment to include single-device simulator (for the diamond diode) and circuit simulator [68].…”

“…Structure of a vertical diamond SBD without edge termination.Up to this date, several diamond m-i-p+ diodes have been fabricated and their static characteristics have been measured[64,84]. Moreover, no study on switching characteristics of diamond m-i-p+ diode has been reported, while only limited measurements on switching characteristics of diamond SBD have been reported in the literature[53,54,85].Static and Transient Characteristics of Diamond Schottky Barrier Diode 46 In this study, we investigated and compared the characteristics of diamond mi-p+ diode and typical p-type diamond SBD by means of experimental data and numerical simulations in TCAD Sentaurus software. The transient characteristics of the diodes are then analysed and simulated in the mixed-mode environment based on the established diodes' models and parameters at different temperatures.…”