Switching Characteristics of Antiparallel Resistive Switches

Liu, Tong; Kang, Yu-Hong; Verma, Mohini; Orlowski, Marius

doi:10.1109/led.2011.2179913

Cited by 33 publications

(26 citation statements)

References 5 publications

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“…Moreover, MR closure theorem in [21] states that any arbitrary interconnection of a MR and a linear or passive nonlinear resistor is equivalent to another MR. Experimental investigation in [22] and [23] unfolds that two realistic switching devices in antiparallel and antiserial connections can result in strikingly novel characteristics. The resulting new pulse behavior, set and reset operation could be useful for applications in neural networks and logic circuits.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Behavior of Coupled Memristor Circuits

Liang

et al. 2015

IEEE Trans. Circuits Syst. I

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This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity.

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Section: Introductionmentioning

confidence: 99%

Dynamic Behavior of Coupled Memristor Circuits

Liang

et al. 2015

IEEE Trans. Circuits Syst. I

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“…With the exception of the Cu d-layer, the manufacturing process is the same as in Ref. 6. The thickness of the Cu d-layer between TaO x and Pt bulk electrode is 6.5 nm.…”

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confidence: 99%

Volatile resistive switching in Cu/TaOx/δ-Cu/Pt devices

et al. 2012

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“…The characteristics of antiparallel resistive switches (APSs) have been reported for two externally connected Cu/TaO x /Pt devices shown in Fig. 1(a) [14]. Here, we demonstrate the I-V characteristics of APSs in a single Cu/TaO x /Pt device cell.…”

Section: I-v Characteristics Of Antiparallel Resistive Switches Obsermentioning

confidence: 51%

“…The unique I-V characteristic is caused by the forming and rupture of Cu and V O CFs within a single cell. The cell alternatively switches on and off in one cycle displaying the same characteristic as two antiparallel connected individual cells [14]. To avoid irreversible damage, a compliance current is applied to the device for the high-voltage SET operations.…”

Section: Resultsmentioning

confidence: 99%

$I$–$V$ Characteristics of Antiparallel Resistive Switches Observed in a Single $\hbox{Cu/TaO}_{x}\hbox{/Pt}$ Cell

Liu

Verma

Kang

et al. 2013

IEEE Electron Device Lett.

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A Cu/TaO x /Pt resistive cell can transition from a high-resistance state to a low-resistance state by applying positive or negative SET voltages. The SET operation with positive bias is due to the electrochemical formation of a Cu conductive filament (CF), whereas the SET operation with negative bias is attributed to the electroreduction of solid electrolyte and formation of an oxygen vacancy V O CF. Both CFs can be reset by Joule heating. Since SET voltages of the V O CF have higher absolute values than those of the Cu CF, the switching based on Cu and V O CFs can be decoupled within the same device. The device is inherently an antiparallel resistive switch circuit that can be consecutively switched between the Cu and V O CFs. Index Terms-Antiparallel resistive switch (APS), conductive filament (CF), oxygen vacancy.

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Switching Characteristics of Antiparallel Resistive Switches

Cited by 33 publications

References 5 publications

Dynamic Behavior of Coupled Memristor Circuits

Dynamic Behavior of Coupled Memristor Circuits

Volatile resistive switching in Cu/TaOx/δ-Cu/Pt devices

$I$–$V$ Characteristics of Antiparallel Resistive Switches Observed in a Single $\hbox{Cu/TaO}_{x}\hbox{/Pt}$ Cell

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