Switching characteristics of high power buried gate turn-off thyristor

Suzuki, Toshiaki; Ugazin, T.; Kekura, Mitsuru; Watanabe, Tsunenori; Sueoka, Tetsuro

doi:10.1109/iedm.1982.190333

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Novel Cell Design1

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Cited by 9 publications

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“…A similar design (but not the same) with a buried high p concentration exists in Gate Turn Off (GTO) thyristors [7,8]. In this case, the p base is made lowly doped (therefore highly resistive) to achieve high cathode/gate breakdown voltage and the p+ buried layer inside the p base (underneath the gate) aims to restore the lateral resistance of this region.…”

Section: Novel Cell Designmentioning

confidence: 99%