Switching kinetics in KNO3 ferroelectric thin-film memories

Dimmler, Klaus; Parris, Michael D.; Butler, Donald P.; Eaton, Shane M.; Pouligny, B.; Scott, J. F.; Ishibashi, Yoshihiro

doi:10.1063/1.338237

Cited by 111 publications

(41 citation statements)

References 19 publications

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“…1,7,[11][12][13][14][15][16] In our experiments we followed a slightly different approach. An initially nonpoled sample is subjected to an electric field rate Ė f of 5 ϫ 10 −2 kV/ cm s in the forward direction, showing a single switching peak at 4.9 kV/cm ͓Fig.…”

Section: Resultsmentioning

confidence: 99%

Double-peak switching current in soft ferroelectric lead zirconate titanate

Kamel

With

2007

Journal of Applied Physics

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Switching current measurements have been carried out on a soft lead zirconate titanate ͑PXE52, donor doped, modified proprietary composition with the overall formula PbZr 0.415 Ti 0.585 O 3 ͒. The experiments showed a single switching current peak during the application of electric field to a nonpoled ͑virgin͒ sample. However, an unusual double peak for the switching current was observed upon reversing the electric field polarity. The pyrocurrent for a forward and reverse poled sample showed a related behavior. A single pyropeak is observed in the forward poled case and broadened peak was observed in case of a reverse poled sample. This behavior is attributed to non-180°domain switching during the reverse poled case as a result of residual stresses developed during the forward poling.

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Section: Resultsmentioning

confidence: 99%

Double-peak switching current in soft ferroelectric lead zirconate titanate

Kamel

With

2007

Journal of Applied Physics

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“…We demonstrate that the memristive states are univocally related to the polarization switching and that every memristor state can be achieved by design. Based on the analytical description given by the Kolmogorov-Avrami-Ishibashi [KAI] model [10,11] we are able to explain the memristive behavior as being a result of coexisting, parallel-connected ferroelectric domains of opposite polarity inside 3600 μm 2 capacitor devices. This said, in principle every ferroelectric tunnel junction with a bigger capacitor area than the nuclei size of its ferroelectric domains is intrinsically a memristor, irrespective of the injection mechanism.…”

Section: Introductionmentioning

confidence: 99%

Programmable ferroelectric tunnel memristor

2014

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We report a programmable analog memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr 0.2 Ti 0.8 )O 3 film sandwiched between La 0.7 Sr 0.3 MnO 3 and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10 −7 s. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

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“…Reducing the number of nucleation defects does not necessarily increase the coercive field, but generally slows switching [3]. A more effective way to increase the coercive field is to make a particle small enough or a film thin enough to inhibit nucleation [3][4][5][6]. Several mechanisms for this finite-size effect have been proposed, including reduction of nucleation volume, space charge near the electrodes, and surface pinning [2,6,7].…”

Section: (Received 29 June 1999)mentioning

confidence: 99%