Switching kinetics of ferroelectric polymer nanomesas

Othon, Christina M.; Kim, Jihee; Ducharme, Stephen; Fridkin, V. M.

doi:10.1063/1.2975200

Cited by 18 publications

(12 citation statements)

References 31 publications

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“…14 In summary, the observed dynamics of switching for an individual ferroelectric polymer nanomesa is consistent with a nucleation-limited process, as was found with arrays of similar nanomesas 26 and with a 500-nm-diameter spot in a continuous LB film. The nucleation-type switching behavior is commonly observed with ferroelectric polymer films made by solvent spinning, 4,11-15 and with LB films made under certain conditions.…”

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confidence: 60%

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Polarization switching kinetics of ferroelectric nanomesas of vinylidene fluoride-trifluoroethylene copolymer

Gaynutdinov

Lysova

Yudin

et al. 2009

Applied Physics Letters

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confidence: 60%

“…To better understand the effects of nanoscale morphology, we have studied switching dynamics at the nanoscale in polycrystalline films 25 and nanostructures. 26 The purpose of this paper is to report an investigation of the kinetics of switching of individual ferroelectric polymer nanomesas using piezoresponse force microscopy ͑PFM͒.…”

mentioning

confidence: 99%

Polarization switching kinetics of ferroelectric nanomesas of vinylidene fluoride-trifluoroethylene copolymer

Gaynutdinov

Lysova

Yudin

et al. 2009

Applied Physics Letters

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“…(1)). 28 Nanoscale studies of individual nanomesas, using the same AFM-based techniques as in the present work, also reveal extrinsic switching behavior. 29 It is possible that the shape and size of the nanomesa, or perhaps chain folding during the annealing process used to induce self-assembly, 30 promotes surface nucleation even below the critical thickness.…”

mentioning

confidence: 79%

Polarization switching at the nanoscale in ferroelectric copolymer thin films

Gaynutdinov

Mitko²,

Yudin

et al. 2011

Applied Physics Letters

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The polarization switching kinetics were measured at the nanoscale in continuous thin films of a ferroelectric copolymer of vinylidene fluoride and trifluoroethylene. The dependence of the switching rate on voltage for a 54-nm thick film exhibits extrinsic nucleation and domain-growth type kinetics with no true threshold coercive field, and is qualitatively different from the behavior of an 18-nm thick film, which exhibits intrinsic switching kinetics, and a true threshold field. The results are consistent with studies of thin film capacitors of much larger area and with a recent refinement of the theory of the critical size for intrinsic switching.

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“…5, [46]). Capacitors made from large arrays of nanomesas exhibit extrinsic switching, with low coercive field and an exponential field dependence [47]. Nanoscale studies of individual nanomesas, using the same AFM-based techniques as in the present work, also reveal extrinsic switching behavior [48].…”

Section: The Homogeneous Switching In the Ultrathin Ferroelectric Copmentioning

confidence: 77%

Switching Kinetics at the Nanoscale

Fridkin

Ducharme

2013

Ferroelectricity at the Nanoscale

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From the time of domain discovery, the switching kinetics of ferroelectric crystals and thin films has been explained by the domain nucleation and domain dynamics. The domain theory of Kolmogorov-Avrami-Ishibashi (KAI) [1][2][3][4][5][6] successfully explained the switching kinetics of ferroelectric crystals and even thin films with thickness l C 50 nm.A ferroelectric crystal maintains a permanent electric polarization that can be repeatedly switched between two stable states by an external electric field, thus exhibiting a polarization-electric field hysteresis loop ( Fig. 1.3). The hysteresis loops are characterized by the magnitude of the remanent polarization achieved after saturation with a large electric field and by the magnitude of the coercive field, the minimum value of the electric field necessary to reverse, or switch, the polarization state. This coercive field Ec, obtained from LGD mean field theory (Eqs. 4.3, 4.4), is called the intrinsic coercive field, because the switching is homogeneous. From the all previous studies of the kinetics of switching in ferroelectric crystals, it has been apparent that switching is almost invariably an extrinsic process involving the inhomogeneous nucleation of small domains of reversed polarization, usually initiated at crystal boundaries or defects, and subsequent growth of these domains to fill the crystal [7]. Nucleation-limited extrinsic switching is characterized by an exponential increase in the switching rate with increased temperature and electric field, characteristic of an activated process, and is usually achieved with external fields in the range 0.1-50 MV/m. Strictly speaking, extrinsic switching does not have a true threshold coercive field because the activation of nucleation permits switching at arbitrarily small fields, given enough time, but switching experiments are typically carried out with an ac field and so the apparent coercive field is actually a function of frequency. Accordingly this coercive field is called extrinsic.In the absence of nucleation, switching an ideal ferroelectric crystal with uniform polarization requires the application of an enormous coercive field. We call this the intrinsic switching mechanism, and the associated threshold field the intrinsic coercive field [8,9]. The expected value of the intrinsic coercive field is of order 100 MV/m in most ferroelectrics [9]. Intrinsic switching does not occur below the intrinsic coercive field because the constituent crystal dipoles are highly V. Fridkin and S. Ducharme, Ferroelectricity at the Nanoscale, NanoScience and Technology,

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Switching kinetics of ferroelectric polymer nanomesas

Cited by 18 publications

References 31 publications

Polarization switching kinetics of ferroelectric nanomesas of vinylidene fluoride-trifluoroethylene copolymer

Polarization switching kinetics of ferroelectric nanomesas of vinylidene fluoride-trifluoroethylene copolymer

Polarization switching at the nanoscale in ferroelectric copolymer thin films

Switching Kinetics at the Nanoscale

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