Switching Loss Characterization of GaN-based Buck Converter under Different Substrate Biases

Safayatullah,; Yang, Wen; Yuan, J.S.; Balakrishnan, Kalpana

doi:10.1109/wipda46397.2019.8998953

Cited by 9 publications

(2 citation statements)

References 12 publications

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“…The development of a switching power converter board based on wide band-gap (WBG) semiconductors brings numerous performance advantages while also opening up many issues [1]; the most important ones are related to modelling [2,3], losses in both switching [4,5] and conduction operation [6], and EMI (ElectroMagnetic Interference) effects [7]. In fact, such devices, particularly those based on GaN which allow higher switching frequency compared to traditional silicon devices, require a more detailed knowledge of the device and layout parasitics and can generate conducted and radiated emissions.…”

Section: Introductionmentioning

confidence: 99%

“…In fact, such devices, particularly those based on GaN which allow higher switching frequency compared to traditional silicon devices, require a more detailed knowledge of the device and layout parasitics and can generate conducted and radiated emissions. With reference to switching losses, in [4,5], the lack of suitable models for estimating such losses is highlighted; in addition, measurements have to consider the probe-oscilloscope system to guarantee the fidelity in measuring the voltage-current waveforms. Measures are necessary to supply the lack of complete models; on the other hand, it is fundamental not to forget that the rise time is in the nanosecond range.…”

Section: Introductionmentioning

confidence: 99%

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GaN and SiC Device Characterization by a Dedicated Embedded Measurement System

et al. 2023

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This work proposes a comparison among GaN and SiC device main parameters measured with a dedicated and low-cost embedded system, employing an STM32 microcontroller designed to the purpose. The system has the advantage to avoid the use of expensive laboratory measurement equipment to test the devices, allowing to obtain their behavior in operating conditions. The following KPIs (Key Performance Indicators) are measured and critically compared: threshold voltage, on-resistance and input capacitance. All the measurements are carried out in a short time interval and on a wide range of switching frequencies, ranging from 10 kHz to 1 MHz. This investigation is focused on the deviation of the figures of merit when the switching frequency changes, since it is crucial for wide-bandgap devices. The devised, low-cost, microcontroller unit allows high flexibility and system portability, while the employed equivalent-time sampling technique overcomes some issues related to the need of high sampling frequency. It allows good performances with common microcontroller embedded AD converters. To validate the proposed system, the obtained results have been compared with the time-domain waveforms acquired with a traditional laboratory oscilloscope and a study of the system’s measurement errors has been carried out. Results show that GaN devices achieve a higher efficiency with respect to SiC devices in the considered range of switching frequencies. The on-resistance exhibited by GaN devices shows, as expected, an increase with frequency, which happens to switching losses, too. On the other hand, GaN devices are more sensitive to parasitic effects and the high dV/dt, due to the reduced switching times, can excite unwanted ringing phenomena.

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