. orcid.org/0000-0002-5770-3917 and Foster, M.P. (2017) On the impact of current generation commercial gallium nitride power transistors on power converter loss. Electronics Letters, 53 (22
ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website.
TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.On the impact of current generation commercial gallium nitride power transistors on power converter loss The enormous potential benefits of gallium nitride based power switching devices, only commercially available very recently, in terms of power switching device loss are highlighted. This is first demonstrated through a simulated prediction of loss in multilevel converters, followed by experimental validation. While the simulations focus on losses in multilevel converters, the observations made are relevant in a broad range of applications.Introduction: Currently, power switching devices are predominantly silicon (Si) based, with the notable exception of silicon carbide based power switching devices which already find somewhat widespread use, especially in high-voltage switching applications.