2020
DOI: 10.1049/iet-pel.2019.1003
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Switching losses prediction methods oriented to power MOSFETs – a review

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Cited by 13 publications
(3 citation statements)
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“…In the literature, modeling of power semiconductor devices has been reported to be performed using behavioral, semi-physics, physics-based, semi-numerical, and numerical/analytical models [34]. Behavioral models are used to represent the device behavior rather than the device physics based on functions, and are considered a good trade-off between accuracy and simulation time [36]. Using mathematical techniques and correspondent circuits, a relatively high simulation speed can be achieved by behavioral models, but physics-based understanding into the device behavior is lost [37,38].…”
Section: Models Of Semiconductor Power Devicesmentioning
confidence: 99%
“…In the literature, modeling of power semiconductor devices has been reported to be performed using behavioral, semi-physics, physics-based, semi-numerical, and numerical/analytical models [34]. Behavioral models are used to represent the device behavior rather than the device physics based on functions, and are considered a good trade-off between accuracy and simulation time [36]. Using mathematical techniques and correspondent circuits, a relatively high simulation speed can be achieved by behavioral models, but physics-based understanding into the device behavior is lost [37,38].…”
Section: Models Of Semiconductor Power Devicesmentioning
confidence: 99%
“…Loss models based on analytical equations exist but they are often complex and strongly depend on assumptions and simplifications [2]. Direct loss measurements are often preferred to analytical models.…”
Section: Introductionmentioning
confidence: 99%
“…Time-consuming analytical analysis by different subject experts was used in the past to overcome these complex challenges. Nowadays, the use of computer simulation in the design of electronic systems is a standard [1]- [3]. It is necessary to determine the functionality and efficiency of the converter during its development.…”
Section: Introductionmentioning
confidence: 99%