Switching mechanisms in flexible solution-processed TiO₂memristors

Abstract

Memristors are emerging as unique electrical devices with potential applications in memory, reconfigurable logic and biologically inspired computing. Due to the novelty of these devices, the complete details of their switching mechanism is not yet well established. In this work, the switching mechanism of our solution-processed titanium dioxide-based memristor is investigated by studying how variations in the device area and film thickness affect electrical behavior and correlating these behavioral changes to proposed switching mechanisms. The conduction path of the switching is also investigated through electrical characterization of devices both before and after physically cutting the devices in half, as well as through infrared imaging of the devices during operation. The results suggest that the electrical behavior of these devices is dominated by a localized, charge-based phenomenon that exhibits a dependence on device area.

Memristive Anodic Oxides: Production, Properties and Applications in Neuromorphic Computing

“…More recently, low-cost processes have been successfully employed to produce resistive switching oxides, including solution processing-sol-gel, hydrothermal synthesis-and electrochemical techniques, both electrodeposition and anodic oxidation. The former set of techniques has the advantage of producing oxides free of substrate, hence they can be deposited on any substrate, including flexible ones [56][57][58]. Production of the oxides generally involves mild temperatures and ambient pressures in case of sol-gel [57,[59][60][61][62], or the use of a pressurized vessel, specific for hydrothermal treatments [63][64][65], which in all cases represent low-cost alternatives to low pressure, high-temperature chemical or physical deposition processes.…”

Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

“…This behavior contrasts with typical memristors, for which it known the conductance continuously increases during consecutive positive voltage sweeps. 2,3,7,12,16,[22][23][24]32 In that case, the increase in conductance is due to the progressive diffusion of mobile oxygen vacancies across the device under the influence of the applied field. 24 The measured I-V characteristics of the HAT ZnO NW device, however, exhibit decreasing conductance as the voltage sweeps are repeated, demonstrating that oxygen vacancies and their associated conduction electrons are trapped at a-ZnO interfacial layer formed between Au contact metal and ZnO NW.…”

“…5 Various materials such as semiconductors and insulators with switchable and sustainable resistance have been used to realize the memristive behavior; including proteins, 6 silicon (Si), 7 Ag/Si mixtures, 8 phase change materials, 9,10 transition metal dichalcogenides 11,12 and metal oxides. [13][14][15][16][17][18][19] Recently, one dimensional nanostructures such as nanowires (NWs) have attracted significant attention not only because of their unique physical properties in confined dimensions, but also due to the benefit for mass production and potential for high density integration circuits. 20,21 Controlling NW dimensions may also provide new insights into the memristor phenomenon, in particular the roles of bulk and surface mediated conduction.…”

I-V characteristic effects of fluidic-based memristor for glucose concentration detection

“…The first layer is perfect TiO 2 , and the second is a layer of TiO 2 with oxygen vacancies [3]. Several researchers, including Tedesco et al and Gale et al, employed aluminum as a contact material [4,5]. Prodromakis et al utilized gold as a contact material [6].…”