Switching of Subterahertz Waves Within a Duration Range of Ten Orders of Magnitude

Kulygin, Maxim L.; Денисов, Г. Г.; Новиков, Е. А.; Fokin, A. P.; Litovsky, Ilya A.

doi:10.1007/s11141-019-09920-x

Radiophys Quantum El

2019

DOI: 10.1007/s11141-019-09920-x

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Switching of Subterahertz Waves Within a Duration Range of Ten Orders of Magnitude

Maxim L. Kulygin

Г. Г. Денисов

Е. А. Новиков

et al.

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Cited by 15 publications

(2 citation statements)

References 16 publications

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“…reflected. The application of LDSS systems in generating short pulses has been well characterized in prior research [1], [5], [6], [7], [8], [9], [10], [11]. Theoretical work describing the response of the semiconductor has been carried out for waveguide and free-space systems [1], [8], [12], [13], [14], [15].…”

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confidence: 99%

Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation

Claveau

Jawla

et al. 2023

IEEE Trans. THz Sci. Technol.

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The reflectance (R) and transmittance (T) of Si and GaAs wafers irradiated by a 6 ns pulsed, 532 nm laser have been studied for s-and p-polarized 250 GHz radiation as a function of laser fluence and time. The measurements were carried out using precision timing of the R and T signals, allowing an accurate determination of the absorptance (A) where A = 1-R-T. Both wafers had a maximum reflectance above 90% for a laser fluence ≥8 mJ/cm 2 . Both also showed an absorptance peak of ∼50% lasting ∼2 ns during the risetime of the laser pulse. Experimental results were compared with a stratified medium theory using the Vogel model for the carrier lifetime and the Drude model for permittivity. Modeling showed that the large absorptance at the early part of the rise of the laser pulse was due to the creation of a lossy, low carrier density layer. For Si, the measured R, T and A were in very good agreement with theory on both the nanosecond time scale and the microsecond scale. For GaAs, the agreement was very good on the nanosecond scale but only qualitatively correct on the microsecond scale. These results may be useful for planning applications of laser driven semiconductor switches.

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confidence: 99%

Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation

Claveau

Jawla

et al. 2023

IEEE Trans. THz Sci. Technol.

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“…1 The fundamental behavior of LDSS systems in generating short pulses has been well characterized by previous experiments at lower RF power levels. 3,4,[6][7][8][9][10][11] Theoretical work investigating the semiconductor response has been completed for both fundamental waveguide and free-space systems. 3,12,13 LDSS systems have been applied to electron spin resonance spectroscopy, notably in 2014 using a 150 W gyrotron at 154 GHz as the RF source.…”

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confidence: 99%

Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron

Picard

Schaub

Rosenzweig

et al. 2019

Applied Physics Letters

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A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide (GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 ls, 110 GHz gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a 532 nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the laser produced 110 GHz RF pulses with a 9 ns width and >70% reflectance. Under the same conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with >78% reflectance. For both semiconductor materials, a higher value of reflectance was observed with increasing 110 GHz beam intensity. Using two active wafers, pulses of variable length down to 3 ns duration were created. The switch was tested at incident 110 GHz RF power levels up to 600 kW. A 1-D model is presented that agrees well with the experimentally observed temporal pulse shapes obtained with a single Si wafer. The LDSS has many potential uses in high power millimeter-wave research, including testing of high-gradient accelerator structures.

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Sub-Terahertz Complex Permittivity Measurement Method Using Cavity Switches

Kulygin

Litovsky

2020

J Infrared Milli Terahz Waves

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Switching of Subterahertz Waves Within a Duration Range of Ten Orders of Magnitude

Cited by 15 publications

References 16 publications

Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation

Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation

Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron

Sub-Terahertz Complex Permittivity Measurement Method Using Cavity Switches

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