2013
DOI: 10.1049/el.2013.0985
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Switching operation improvement of phase change memory with nanoscale W plug structure by CMP process

Abstract: To reduce the reset current for developing reliable high-density phase change random access memory, small bottom electrode contact (BEC) size formation is a critical process. One of the failure modes for the process is the corrosion of the tungsten (W) plug, which is caused by the W chemical mechanical polisher (CMP) process. An ultrasmooth surface of BEC nanoscale W plug structure was successfully fabricated by the CMP process, which reduced the W/phase change material (Ge 2 Sb 2 Te 5 , GST) contact resistanc… Show more

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