Switching performance evaluation of commercial SiC power devices (SiC JFET and SiC MOSFET) in relation to the gate driver complexity

Abstract

Silicon Carbide (SiC) power devices can provide a significant improvement of power density and efficiency in power converters. The switching performances of SiC power devices are often a trade-off between the gate driver complexity and the desired performance; this is especially true for SiC BJTs and JFETs.

Analysis of DC/DC converter efficiency for energy storage system based on bidirectional fuel cells

“…Since efficiency is one of the major concerns for this application, the replacement of the high voltage power semiconductors with SiC JFETs or SiC MOSFETs would be beneficial in order to further increase the dc-dc converter efficiency. However, this will significantly increase the cost of the dc-dc converter due to the more expensive power devices and gate drivers [13].…”

An interface board for developing control loops in power electronics based on microcontrollers and DSPs Cores -Arduino /ChipKit /dsPIC /DSP /TI Piccolo

“…This setup on Fig. 6a is often referred as double pulse test circuit; it was used to characterize the switching performance of power semiconductors such as Si IGBTs, SiC JFETs and SiC MOSFETs in [10] [11]. During these test it was important to maintain exactly the same pulse width (therefore, the same testing current, Fig.…”

“…The interface board can be operated with the desired core and simply Project sponsored by the Energy Technology Development and Demonstration Programme (EUDP) "Green Natural Gas", 2011-2014. [11]. Moreover, a 6 kW dc-dc isolated boost full bridge converter prototype was developed and tested with the presented interface board [11].…”

“…[11]. Moreover, a 6 kW dc-dc isolated boost full bridge converter prototype was developed and tested with the presented interface board [11].…”

Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer

“…For the pulse current measurement, an ideal method should have some essential qualities: the high enough bandwidth, the galvanic isolation and the suitable mechanical size. At present, there are three methods widely used in this field, which are Rogowski coil [1][2], coaxial current shunt [3] and Pearson current monitor [3][4][5].…”