Switching Properties Improvement of Tungsten-Doped Indium Oxide Phototransistor

Abstract

High-performance and transparent tungsten-doped indium oxide (InWO) thin-film transistors (TFTs) with aluminum or indium oxide (In2O3) source and drain (S/D) electrodes were fabricated using the radiofrequency (RF) co-sputtering method. Due to the lower electron barrier height of the In2O3/InWO interface, the device with a homojunction structure exhibited better performance (μ eff = 20.1 cm2 V−1 ·s−1 and S.S. = 0.17 V dec−1) than the one with a heterojunction structure. Moreover, due to the high transparency of the S/D electrode, the light-sensing area was magnified. Thus, the responsivity of the phototransistor was significantly improved from 23.68 A W−1 to 89.47 A W−1. This result improved the properties of the interface between the S/D electrode and the channel layer and simplified the manufacturing process for InWO TFTs.

4 in 1: multifunctional europium–organic frameworks with luminescence sensing properties, white light emission, proton conductivity and reverse acetylene–carbon dioxide adsorption selectivity

“…The development of a light-emitting modulated Ln-MOF is expected to replace conventional lighting devices because of the high efficiency, low energy consumption and long life of white light-emitting diodes (WLEDs). 42,43 The high color temperature of 6500 K is the most ideal color temperature for lighting in public places such as stations and stadiums; so it is important to develop new types of cool white phosphors with a high color rendering index. It is well known that the mixing and superposition of the three primary colors of red, green and blue can form white color.…”