Switching Time in Ferroelectric Organic Field‐Effect Transistors

Sugano, Ryo; Tashiro, Tomoko; Sekine, Toshikazu; Matsui, Hiroyuki; Kumaki, Daisuke; Santos, Fabrice Domingues Dos; Miyabo, Atsushi; Tokito, Shizuo

doi:10.1002/pssa.201701059

Cited by 7 publications

(2 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12). However, increase in the channel length enhanced SW due to larger retention time which might be related to slower polarization switching 44,46,49 .…”

Section: Gatementioning

confidence: 99%

A flexible artificial intrinsic-synaptic tactile sensory organ

et al. 2020

View full text Add to dashboard Cite

Imbuing bio-inspired sensory devices with intelligent functions of human sensory organs has been limited by challenges in emulating the preprocessing abilities of sensory organs such as reception, filtering, adaptation, and sensory memory at the device level itself. Merkel cells, which is a part of tactile sensory organs, form synapse-like connections with afferent neuron terminals referred to as Merkel cell-neurite complexes. Here, inspired by structure and intelligent functions of Merkel cell-neurite complexes, we report a flexible, artificial, intrinsicsynaptic tactile sensory organ that mimics synapse-like connections using an organic synaptic transistor with ferroelectric nanocomposite gate dielectric of barium titanate nanoparticles and poly(vinylidene fluoride-trifluoroethylene). Modulation of the post-synaptic current of the device induced by ferroelectric dipole switching due to triboelectric-capacitive coupling under finger touch allowed reception and slow adaptation. Modulation of synaptic weight by varying the nanocomposite composition of gate dielectric layer enabled tuning of filtering and sensory memory functions.

show abstract

“…12). However, increase in the channel length enhanced SW due to larger retention time which might be related to slower polarization switching 44,46,49 .…”

Section: Gatementioning

confidence: 99%

A flexible artificial intrinsic-synaptic tactile sensory organ

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The low‐voltage operating solution processable organic field‐effect transistors (OFETs) are basic building blocks of flexible electronics that have attracted remarkable interest across different application areas, such as organic ferroelectric memory, [ 1–3 ] chemical sensors, [ 4 ] integrated circuits, [ 5,6 ] wearable sensors, [ 7 ] and robotics. [ 8 ] Molecular approaches to enhance OFET mobility have been very successful and OFETs’ mobilities have now surpassed amorphous silicon‐based thin film transistors (TFTs).…”

Section: Introductionmentioning

confidence: 99%

Reduced Threshold Voltages and Enhanced Mobilities in Diketopyrrolopyrrole–Dithienothiophene Polymer‐Based Organic Transistor by Interface Engineering

Patil

Takeda

Trang

et al. 2020

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Flexible and low‐power consuming integrated circuits are some of the basic requirements for smart wearable devices. High mobility solution‐processed organic field‐effect transistors (OFETs) have the potential to make a big impact in printed electronic circuits, but their overall performance is currently limited by unusually high threshold voltages (Vth). Herein, systematic optimization of donor–acceptor conjugated polymer, based on dithienothiophene (DTT) and thiophene‐flanked diketopyrrolopyrrole (DPP), namely, PDPPT–DTT, OFETs by application of self‐assembled monolayers (SAMs) at the semiconductor–dielectric, and semiconductor–metal interfaces is reported. The results clearly exhibit that simultaneous application of octyltrichlorosilane (OTS) as semiconductor–dielectric interface modifying layer and pentafluorobenzene thiol (PFBT) as semiconductor–metal interface modifying layer results in significantly lower Vth and subthreshold slope values from −14.07 V and 13.26 (V Dec−1) to +1.06 V and 7.11 (V Dec−1), respectively. This tailored approach is also beneficial in enhancing hole mobility values by an order of magnitude from 0.01 to 0.5 cm2 V−1 s−1 along with the possibility of switching from hole accumulation mode (Vth = −3.75 V) to depletion mode (Vth = +1.06 V) through device engineering. Simultaneous interface engineering reveals OFET electronic properties can be fine‐tuned for robust circuits and low power electronic applications.

show abstract

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Wang,

Chen,

Yun

et al. 2025

Adv Funct Materials

View full text Add to dashboard Cite

Ferroelectrics are considered to be promising candidates for highly energy‐efficient electronic devices in future information technologies owing to their nonvolatile and low‐energy operation of spontaneous electric polarization. Driven by the pervasive and growing demands for miniaturization and energy efficiency in nanoelectronics, further reductions in the operating voltage of ferroelectric‐based devices are dispensable and thus have received immense attentions. Recent remarkable advances in atomic‐scale synthesis, cutting‐edge characterizations, and multiscale theoretical calculations of ferroelectrics have gained unprecedented insights into the manipulation of emergent functionalities in multiple length scales, which helps the discovery of nontrivial polar structures and designs of device architectures toward the promise of ultralow‐power consumption. Here, state‐of‐the‐art strategies for reducing operating voltage in ferroelectric materials and devices are reviewed. This article starts with a brief introduction and major achievements in ferroelectrics, and expounds on the techniques to probe the polarization‐switching process. Moreover, this article focuses predominantly on recent advancements in achieving low operating voltages through various prevalent strategies such as thickness scaling, defect engineering, chemical doping, surface and interfacial design, strain engineering. Finally, perspectives with scientific and technical challenges are discussed, aiming to facilitate the energy‐efficient applications of ferroelectric materials and devices in future information technologies.

show abstract

Switching Time in Ferroelectric Organic Field‐Effect Transistors

Cited by 7 publications

References 31 publications

A flexible artificial intrinsic-synaptic tactile sensory organ

A flexible artificial intrinsic-synaptic tactile sensory organ

Reduced Threshold Voltages and Enhanced Mobilities in Diketopyrrolopyrrole–Dithienothiophene Polymer‐Based Organic Transistor by Interface Engineering

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Contact Info

Product

Resources

About