Switching waves in asymmetric thyristor-like structures for incomplete gate turn off regime

Abstract

I.Introduction This paper is devoted to the control of the currentconducting region in a thyristor-like structure. Here, as well as before [1, 2] we refer to TLS as a certain P + npN + structure where two outer layers provide effective injection of their majority carriers into two inner layers (bases). One of the bases (base I) is gated. The gate transfers the controlling current into the base. This current squeezes the current-conducting region (the ON-region in fig. 1), and enlarges the OFF-region. The gated base is usually highly conducting in comparison with the second base (base II). In silicon controlled rectifiers (SCRs) [3], the gate current just turns the TLS on and off, while in lightemitting (LE) and lasing (L) thyristors the gate current can also control (or modulate) light emission [4, 5]. That is why we are interested in characteristics of stationary control of the ON-region (the position of the layer between the ON-and OFF-regions, called the ON/OFF-junction) as well as the speed of the ON/OFF-junction in the TLS. Our further consideration is based on the fact that the typical structures of LE thyristors [6, 7, 8] differ greatly from the structures of SCRs. LE thyristors should not

Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

“…The G-P hybrid structures can be used in the realspace-transfer (RST) devices. The RST devices exhibiting the negative differential conductivity (NDC) have attracted a lot of attention since their proposal by Z. S. Gribnikov in early 1970's [25] and further developments (for example, [26][27][28][29][30][31], see also Refs. [32,33] and references therein).…”