Symmetry and electronic properties of the oxygen thermal donor in pulled silicon

Henry, Philip; Farmer, J. W.; Meese, J. M.

doi:10.1063/1.95213

Cited by 20 publications

(5 citation statements)

References 7 publications

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“…84 and 85). Similarly, Henry, Farmer, and Meese 110 and independently Kimerling 111 found the symmetry associated with the 140 meV thermal donor emission consistent with D 2d . However, this apparent high symmetry is probably a result of either thermal averaging or just insuf-ficient resolution to resolve the true symmetry ͑C 2v ͒ as determined from IR and EPR studies by Stavola 112 and Wagner et al, 113 respectively.…”

Section: Uniaxial-stress Applicationsmentioning

confidence: 74%

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Dobaczewski

Peaker

Nielsen

2004

Journal of Applied Physics

291

181

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We present a comprehensive review of implementation and application of Laplace deep-leve1 transient spectroscopy (LDLTS). The various approaches that have been used previously for high-resolution DLTS are outlined and a detailed description is given of the preferred LDLTS method using Tikhonov regularization. The fundamental limitations are considered in relation to signal-to-noise ratios associated with the measurement and compared with what can be achieved in practice. The experimental requirements are discussed and state of the art performance quantified. The review then considers what has been achieved in terms of measurement and understanding of deep states in semiconductors through the use of LDLTS. Examples are given of the characterization of deep levels with very similar energies and emission rates and the extent to which LDLTS can be used to separate their properties. Within this context the factors causing inhomogeneous broadening of the carrier emission rate are considered. The higher resolution achievable with LDLTS enables the technique to be used in conjunction with uniaxial stress to lift the orientational degeneracy of deep states and so reveal the symmetry and in some cases the structural identification of defects. These issues are discussed at length and a range of defect states are considered as examples of what can be achieved in terms of the study of stress alignment and splitting. Finally the application of LDLTS to alloy systems is considered and ways shown in which the local environment of defects can be quantified.

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Section: Uniaxial-stress Applicationsmentioning

confidence: 74%

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Dobaczewski

Peaker

Nielsen

2004

Journal of Applied Physics

291

181

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“…The applied stress has been calibrated against the energy splitting of the oxygen thermal donor in Si [11,12] and a correction is made for the thermal dependence of the spring constant. When stress is applied, endpads are used to cushion the brittle sample.…”

Section: Methodsmentioning

confidence: 99%

Absolute pressure dependence of the second ionization level of EL2 in GaAs

Bliss

Nolte

Walukiewicz

et al. 1990

Applied Physics Letters

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We report the results of deep level transient spectroscopy experiments with the second ionization level of the double donor defect (EL2) under uniaxial stress in p-type GaAs. We measure the shift in the hole emission rate as a function of stress applied in the [100] and [110] directions. By modeling the valence band with two independently displacing bands and appropriately derived effective masses, we determine the absolute hydrostatic pressure derivative of the defect to be 39±15 meV GPa−1. The shear contribution is negligible. These results are very different from those obtained for the first ionization level, which has a much higher absolute pressure derivative of 90 meV GPa−1.

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“…6(b), at the low field region of the J-E relation illustrated in Fig. 6(c) with J/E-E 0.5 , the electron emission at the trap site caused by the misfit dislocation induced a Poole-Frenkel (P-F) emission in the current flow of Gd 2 O 3 /n-GaAs (Henry et al, 1984;Cheng et al, 2005). Moreover, the Fowler-Nordheim (F-N) tunneling regulates the leakage current flow at the high field.…”

Section: Introductionmentioning

confidence: 95%