Symmetry breaking of in-plane anisotropic magnetoresistance with temperature in La-doped Sr2IrO4 films

Microstructure, magnetic and electronic transport properties of reactively facing-target sputtered epitaxial Mn4N films

“…Therefore, the tetragonal crystal field effect is one possible origin of the fourfold symmetry of AMR for Mn 4 N film at low temperature. Besides, the temperature-dependence transition symmetry of AMR has been investigated in the La-doped Sr 2 IrO 4 films, which is probably related to the change of the spin structure [64]. Figures 9(a)-(d) show the AMR of the 7.8, 11.0, 31.5 and 78.8 nm-thick Mn 4 N films at different magnetic fields and 5 K. The twofold symmetry of AMR is getting stronger as the magnetic field increases from 0.1 kOe to 50 kOe.…”

A Mott transistor with giant switching ratio at room temperature and its emulation of artificial synapses

“…36–38 However, no metallic state is observed in the doped iridate thin films with a chemical dopant. 39–41 The difference is presumably due to the ineffective doping effect of the doped iridate films because the chemical and structural disorder by element substitutions become larger under epitaxial strain. As known, IL gating is considered a promising approach to realize effective electrostatic doping with minimized chemical and structural variations.…”