Creation
of the 2D metallic layers with the thickness as small
as a few atomic layers and investigation of their properties are interesting
and challenging tasks of the modern condensed-matter physics. One
of the possible ways to grow such layers resides in the synthesis
of the so-called metal-induced reconstructions on silicon (i.e., silicon
substrates covered with ordered metal films of monolayer or submonolayer
thickness). The 2D Au–Tl compound on Si(111) surface having
periodicity belongs
to the family of the
reconstructions incorporating heavy-metal atoms with a strong spin–orbit
coupling (SOC). In such systems, strong SOC results in the spin-splitting
of surface-state bands due to the Rashba effect, the occurrence of
which was experimentally proved. Another remarkable consequence of
a strong SOC that manifests itself in the transport properties is
a weak antilocalization (WAL) effect, which has never been explored
in the metal layers of atomic thickness. In the present study, the
transport and magnetotransport properties of the 2D Au–Tl compound
on Si(111) surface were investigated at low temperatures down to ∼2.0
K. The compound was proved to show behavior of the 2D nearly free
electron gas system with metallic conduction, as indicated by Ioffe–Regel
criterion. It demonstrates the WAL effect which is interpreted in
the framework of Hikami–Larkin–Nagaoka theory, and possible
mechanisms of the electron decoherence are discussed. Bearing in mind
that besides the (Au, Tl)/Si(111)
system, there are many
other ordered atomic-layer
metal films on silicon differing by composition, structure, strength
of SOC, and spin texture, which provide a promising area for prospective
investigations of the WAL effect at the atomic-scale limit when the
film thickness is less than the electron wavelength.