Symmetry properties of the energy bands of Cd<sub>3</sub>As<sub>2</sub> type crystals

Dowgiałło‐Plenkiewicz, B.; Plenkiewicz, P.

doi:10.1002/pssb.2220960204

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…Thus, any interaction between the nuclear spins and the conduction carriers (hyperfine interaction) is most likely negligible and the Fermicontact interaction does not provide a significant pathway for relaxation. As mentioned earlier, this is an unexpected result, considering that the band dispersion curves of Cd3As2 1,2 are mostly determined by the Cd-5s states (conduction bands). However, the present NMR results show that the Fermi-contact mechanism is not pertinent here.…”

Section: Resultssupporting

confidence: 54%

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Effects of Cd vacancies and unconventional spin dynamics in the Dirac semimetal Cd3As2

Koumoulis

Taylor

McCormick

et al. 2017

The Journal of Chemical Physics

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Section: Resultssupporting

confidence: 54%

“…Cadmium arsenide (Cd3As2) is a " ## % & chemically stable n-type semiconductor with high carrier mobility, which makes it a candidate for device applications [1][2][3][4][5][6][7][8] . Cd3As2 was predicted theoretically by Wang et al 2 to be a Dirac semimetal (DSM).…”

Section: Introductionmentioning

confidence: 99%

Effects of Cd vacancies and unconventional spin dynamics in the Dirac semimetal Cd3As2

Koumoulis

Taylor

McCormick

et al. 2017

The Journal of Chemical Physics

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Level Ordering in II₃‐‐V₂ Semiconducting Compounds

Cisowski

1982

Physica Status Solidi (b)

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The quasicubic model as well as the known value of the crystal field splitting of CdAs, are used to calculate this splitting in other II,-V, compounds. The ordering of p-like levels a t the I?-point is determined and compared with recently available experimental data.Le modde quasi-cubique et la valeur connue du splitting produit par le champ cristallin dans Cd$s, sont utilises pour calculer cette quantite dans d'autres composes I13-V2. L'ordre des niveaux de type p au point I? est determine et compare avec Ies donnees experimentales recemment obtenues.

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Photoemission on AB semiconductor material. Cd₃As₂, Zn₃As₂, Cd₃P₂, Zn₃P₂ crystals and thin films

Hupfer

Hirsch

Schulze

1989

Physica Status Solidi (b)

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A. HUPFBR et al. : Photoemission on Ai'Bz Semiconductor Material 505 phys. stat. sol. (b) 162, 505 (1989) Subject classification: 71.20 and 79.60; S7 Sektion Physik der Karl-Mars-Universitat Leipzigl) (a) a d VEB Werk fur Fern-nsehelektronik Berlin (b) Photoemission on AI,'BZ Semiconductor Material CdsAse, Zn3Asz, CdaPs, Zn& Crystals and Thin Films BY A. HUPFICR~) (a), D. HIRSCH~) (b), and 8. SCHULZE~) (a)The density of valence states of sputter-annealed Cd,As,, Zn,As,, (Cd,,,,Zno,,B),As,, Cd,P2, and Zn,P, crystals as well as in situ UHV deposited Cd,As, and Zn,P, thin films are determined with UV (He/Ne I, 11) and X-ray (Zr MC, AI/Mg Ka) photoemission. Some AilBz valence electron density of states data reported in literature and measured by X-ray emission and UP/XP spectroscopy are verified by the experiments. All Af IBT materials studied provide UPS/XPS curves. which are qualitatively similar to those reported for AIIBV1 compounds. MeToAaMH yjrhTpa@HoneToBo8 (He/Ne I, 11) H peHTreHoBcKoB (Zr MC, Al/Mg Kcc) @OTO-Zn,As,, (Cd,.,,Zn,.,,),As, , Cd,P, H Zn,P, KpHcTaJIJIoB, npHrOTOBneHHbIX npH noMoIqH 3JIeIrTpOHHOB Cl TeHTpOCKOl THH OIlpeAeJIeHa IIJIOTHOCTb BaJIeHTHbIX COCTOIIHHB Cd,As,, ~O M~~~~H~O B I C L I HOHaMH U peKpHCTaJIJIH3a~HOHHbIM OTmHI' OM, a TaHlKe H TOHHHX C$As, H Zn,P, CJIOeB, CY6JIHMHPOBaHHbIX ,,in situ" IIOCpe~CTBOM HCIlapeHHfl B YBB. Haum 3KCIIePAMeHTbl HOATBepXAHJIH HeKOTOpLIe JIHTepaTypHble AaHHbIe 0 IIJIOTHOCTH COCTOIIHHM BaJIeHTHbIX 3JIeKTPOHOB A!j1B? 0 6 p a 3~0~) H3MepeHHble MeTOAaMH peHTreH-3MHCCHOIIHOfi (P3c) H (POT03JIeKTpOHHOfi (Y@3c, P03c) CIIeKTPOCKOIIHH. nOJIyYaeMbIe YQ.3 H P a 3 CIIeKTpbI BCeX Ai'RT MaTepHaJIOB HaXOARTCR B KageCTBeHHOM CXOACTBe C OHY6jrHKOBCHHbIMH cneHTpanmi AI1BV1 o6pasuo~.

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Symmetry properties of the energy bands of Cd₃As₂ type crystals

Cited by 6 publications

References 5 publications

Effects of Cd vacancies and unconventional spin dynamics in the Dirac semimetal Cd3As2

Effects of Cd vacancies and unconventional spin dynamics in the Dirac semimetal Cd3As2

Level Ordering in II₃‐‐V₂ Semiconducting Compounds

Photoemission on AB semiconductor material. Cd₃As₂, Zn₃As₂, Cd₃P₂, Zn₃P₂ crystals and thin films

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Symmetry properties of the energy bands of Cd3As2 type crystals

Cited by 6 publications

References 5 publications

Effects of Cd vacancies and unconventional spin dynamics in the Dirac semimetal Cd3As2

Effects of Cd vacancies and unconventional spin dynamics in the Dirac semimetal Cd3As2

Level Ordering in II3‐‐V2 Semiconducting Compounds

Photoemission on AB semiconductor material. Cd3As2, Zn3As2, Cd3P2, Zn3P2 crystals and thin films

Contact Info

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Symmetry properties of the energy bands of Cd₃As₂ type crystals

Level Ordering in II₃‐‐V₂ Semiconducting Compounds

Photoemission on AB semiconductor material. Cd₃As₂, Zn₃As₂, Cd₃P₂, Zn₃P₂ crystals and thin films