Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)

Lee, Mi Jung; Lee, Sangik; Lee, Sung-Min; Balamurugan, Krishnaswamy; Yoon, Chansoo; Jang, Jun Tae; Kim, Sung Hoon; Kwon, Deok‐Hwang; Kim, Miyoung; Ahn, Jae‐Pyoung; Kim, Dae Hwan; Park, Je‐Geun; Park, Bae Ho

doi:10.1038/s41427-018-0016-7

Cited by 52 publications

(52 citation statements)

References 37 publications

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“…Among the 2D vdW magnetic materials, CrPS 4 is currently enjoying a surge of interest [30][31][32][33][34][35] . CrPS 4 was first synthesized in the 1970s and found to possess a monoclinic symmetry (C2/m space group) 36 .…”

Section: Introductionmentioning

confidence: 99%

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Susilo¹,

Jang²,

Feng³

et al. 2020

npj Quantum Mater.

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Two-dimensional van der Waals (vdW) magnetic materials have emerged as possible candidates for future ultrathin spintronic devices, and finding a way to tune their physical properties is desirable for wider applications. Owing to the sensitivity and tunability of the physical properties to the variation of interatomic separations, this class of materials is attractive to explore under pressure. Here, we present the observation of direct to indirect band gap crossover and an insulator-metal transition in the vdW antiferromagnetic insulator CrPS 4 under pressure through in-situ photoluminescence, optical absorption, and resistivity measurements. Raman spectroscopy experiments revealed no changes in the spectral feature during the band gap crossover whereas the insulator-metal transition is possibly driven by the formation of the high-pressure crystal structure. Theoretical calculations suggest that the band gap crossover is driven by the shrinkage and rearrangement of the CrS 6 octahedra under pressure. Such high tunability under pressure demonstrates an interesting interplay between structural, optical and magnetic degrees of freedom in CrPS 4 , and provides further opportunity for the development of devices based on tunable properties of 2D vdW magnetic materials.

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Section: Introductionmentioning

confidence: 99%

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Susilo¹,

Jang²,

Feng³

et al. 2020

npj Quantum Mater.

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“…For instance, filling/depleting the boron vacancies with metal ions from an active electrode to form/rupture a conductive bridge led to volatile and nonvolatile resistance switching (or between STSP and LTSP) of electrical synapses . A new class of 2D vdW materials, TmPS x , where Tm represents a transition metal, was sandwiched by Ag and Au electrodes to demonstrate multiple resistance states for synaptic devices using voltage bias smaller than 0.3 V …”

Section: D Materials and Heterostructure‐based Synaptic Devicesmentioning

confidence: 99%

Recent Progress in Synaptic Devices Based on 2D Materials

Sun

Wang

Yang

2020

Advanced Intelligent Systems

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Diverse synaptic plasticity with a wide range of timescales in biological synapses plays an important role in memory, learning, and various signal processing with exceptionally low power consumption. Emulating biological synaptic functions by electric devices for neuromorphic computation has been considered as a way to overcome the traditional von Neumann architecture in which separated memory and information processing units require high power consumption for their functions. Synaptic devices are expected to conduct complex signal processing such as image classification, decision‐making, and pattern recognition in artificial neural networks. Among various materials and device architectures for synaptic devices, 2D materials and their van der Waals (vdW) heterostructures have been attracting tremendous attention from researchers based on their capacity to mimic unique synaptic plasticity for neuromorphic computing. Herein, the basic operations of biological synapses and physical properties of 2D materials are discussed, and then 2D materials and their vdW heterostructures for advanced synaptic operations with novel working mechanisms are reviewed. In particular, there is a focus on how to design synaptic devices with the vdW structures in terms of critical 2D materials and their limitations, providing insight into the emerging synaptic device systems and artificial neural networks with 2D materials.

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“…Furthermore, owing to their dangling-bonds-free surface and atomically thin nature, a variety of 2D materials-based heterostructures have been developed in spite of their lattice mismatch ( Novoselov et al., 2016 ). 2D layered materials can be utilized as active materials in diode-type neuromorphic device architecture with two-electrode configuration, allowing for the storage and updating of synaptic weights via various mechanisms, e.g., the formation of filaments ( Lee et al., 2018 ; Shi et al., 2018 ; Xu et al., 2019 ), the transformation of phases ( Zhu et al., 2019 ), or redistribution of atomic vacancies ( Zhu et al., 2019 ). The unrivaled thinness of 2D materials also enables rapid electrical switching in memristor devices circumventing short channel effects, leading to improved energy efficiency ( Stanford et al., 2018 ).…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

Mofid

et al. 2020

iScience

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Summary Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.

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Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)

Cited by 52 publications

References 37 publications

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Recent Progress in Synaptic Devices Based on 2D Materials

Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

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