Synaptic MoS2 transistors based on charge trapping two-dimensionally confined in Sr2-Co Nb3O10 nanosheets

Oh, DaYea; Yim, Haena; Yoo, Jeong Rae; Oh, Gwangtaek; Yoon, Chansoo; Choi, Ji‐Won; Park, Bae Ho

doi:10.1016/j.mssp.2023.107424

Cited by 2 publications

(1 citation statement)

References 26 publications

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“…Over the past decade, 2D MoS 2 has garnered significant attention for use in the channels of synaptic transistors because of its exceptional structural stability and notable electrical properties, offering significant improvements in the levels of robustness of electronic devices. [14][15][16][17][18][19] An MoS 2 field-effect transistor (FET) exhibits in-and extrinsic properties, such as defects in the MoS 2 channel, absorption of H 2 O and O 2 molecules on the channel surface, and charge trapping/release at the MoS 2 -dielectric interface. [20][21][22][23] Therefore, the non-volatile hysteresis behavior of the MoS 2 FET may be exploited to mimic the essential features of the neurotransmitter release dynamics of a chemical synapse.…”

Section: Introductionmentioning

confidence: 99%

Layered Wide Bandgap Semiconductor GaPS₄ as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

Cao,

Yan,

Wang

et al. 2024

Adv Funct Materials

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Artificial synaptic devices (ASDs) are attracting widespread attention as highly promising components for use in complex neuromorphic systems, playing crucial roles in addressing the challenges posed by the conventional von Neumann architecture. However, the instabilities of ASDs in high‐temperature environments diminish the reliabilities of the device performances, significantly inhibiting their practical application. Herein, a highly reliable 2D MoS2/GaPS4 ASD that maintains its functionality even after exposure to 400 °C is proposed. Moreover, due to the enhanced charge‐trapping effect of the GaPS4 layer, the memory window expands from an initial 42 to 55 V, accompanied by a substantial on/off ratio of 105, low off‐leakage current of 10−11 A, and high number of endurance cycles (103). The device effectively simulates various biological synaptic functions via electric and light stimulation. Notably, the high electric and light paired‐pulse facilitation indices suggest an exceptional synaptic performance. The findings introduce a novel approach to high‐temperature neuromorphic applications via defect engineering.

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Section: Introductionmentioning

confidence: 99%

Layered Wide Bandgap Semiconductor GaPS₄ as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

Cao,

Yan,

Wang

et al. 2024

Adv Funct Materials

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Flexible and stretchable synaptic devices for wearable neuromorphic electronics

Lee,

Ro,

et al. 2023

Flex. Print. Electron.

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Wearable neuromorphic devices have gained attention because of the growth in the Internet of Things and the increasing demand for health monitoring. They provide meaningful information and interact with the external environment through physiological signal processing and seamless interaction with the human body. The concept of these devices originated from the development of neuromorphic and flexible/stretchable electronics, which offer a solution to the limitation of conventional rigid devices. They have been developed to mimic synaptic functions and flexibility/stretchability of the biological nervous system. In this study, we described the various synaptic properties that should be implemented in synaptic devices and the operating mechanisms that exhibit these properties with respect to two- and three-terminal devices. Further, we specified comprehensive methods of implementing mechanical flexibility and stretchability in neuromorphic electronics through both structure and material engineering. In addition, we explored various wearable applications of these devices, such as wearable sensors for danger detection, auxiliary equipment for people with sensory disabilities, and neuroprosthetic devices. We expect this review to provide an overall understanding of concepts and trends for flexible and stretchable neuromorphic devices, with potential extensions to state-of-the-art applications such as cybernetics and exoskeleton.

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Synaptic MoS2 transistors based on charge trapping two-dimensionally confined in Sr2-Co Nb3O10 nanosheets

Cited by 2 publications

References 26 publications

Layered Wide Bandgap Semiconductor GaPS₄ as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

Layered Wide Bandgap Semiconductor GaPS₄ as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

Flexible and stretchable synaptic devices for wearable neuromorphic electronics

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Synaptic MoS2 transistors based on charge trapping two-dimensionally confined in Sr2-Co Nb3O10 nanosheets

Cited by 2 publications

References 26 publications

Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

Flexible and stretchable synaptic devices for wearable neuromorphic electronics

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Layered Wide Bandgap Semiconductor GaPS₄ as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

Layered Wide Bandgap Semiconductor GaPS₄ as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications