Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor

Hwang, Hyun-Gyu; Woo, Jong‐Un; Lee, Tae–Ho –H; Park, Sung Mean; Lee, Tae–Gon –G; Lee, Woong Hee; Nahm, Sahn

doi:10.1016/j.matdes.2019.108400

Cited by 43 publications

(26 citation statements)

References 53 publications

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“…To date, reversible resistive properties have been reported using a large number of oxides. Among them, HfO 2 and Ta 2 O 5 are the leading oxide materials that show outstanding memory characteristics [14][15][16]. In particular, when the oxide layer is deposited in two or three multi-layers, memory characteristics are improved because the layers act as oxygen reservoirs or tunnel barriers.…”

Section: Introductionmentioning

confidence: 99%

Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

Ryu

Kim

2020

Nanomaterials

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Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaOx/HfO2) was fabricated, and its synaptic applications were characterized. Device deposition was confirmed through TEM imaging and EDS analysis. During the forming and set processes, switching of the memristor device can be divided into three types by compliance current and cycling control. Filamentary switching has strengths in terms of endurance and retention, but conductance is low. On the other hand, for interface-type switching, conductance is increased, but at the cost of endurance and retention. In order to overcome this dilemma, we proposed pseudo interface-type switching, and obtained excellent retention, decent endurance, and a variety of conductance levels that can be modulated by pulse response. The recognition rate calculated by the neural network simulation using the Fashion Modified National Institute of Standards and Technology database (MNIST) dataset, and the measured conductance values show that pseudo interface-type switching produces results that are similar to those of an interface-type device.

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Section: Introductionmentioning

confidence: 99%

Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

Ryu

Kim

2020

Nanomaterials

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“…Frequent stimulation can make synapses produce memory (STM and LTM), which are both important functions of biological synapses. For this stimulation, STM can be transformed into LTM by continuous training. ,− As depicted in Figure g, with the increase of the number of pulses, the postsynaptic current produced by the synapse is higher, indicating that the memory level of the synapse can be increased with the increase of stimulation. The current decay curve in artificial synapses is similar to the forgetting curve in a human brain.…”

Section: Resultsmentioning

confidence: 99%

Robust and Low-Power-Consumption Black Phosphorus–Graphene Artificial Synaptic Devices

Yuan

Qiu

Amina

et al. 2022

ACS Appl. Mater. Interfaces

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black phosphorus (BP) materials, as the most promising building blocks for the development of artificial synapses, have attracted more and more attention. However, the instability of exfoliated 2D BP structures still remains a problem in the development of artificial synapse devices. In this study, the robust and low-power-consumption artificial-synapticbased BP was successfully manufactured. The synapse devices have high stability in the air atmosphere and do not show obvious degradation over 3 months. The obtained devices not only implement the main function of synapses but also perform the function of dendritic neural synapses and simple logical operations, revealing their very strong learning behavior. The high mobility of 2D BP as well as the coupled effect and quantum confinement effect of the graphene oxide quantum dot (GOQD) can greatly boost the performance of BP-based synapse devices, such as low power consumption (62 pW) and high sensitivity (ultrasmall stimuli at an amplitude of −20 mV). Moreover, benefiting from the GOQD and the interaction between BP and graphene, the main dominated mechanism of the BP− graphene synapse device can be the capture and release of electrons by the 2D BP and GOQD instead of the conductive filament.

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“…Other typical synaptic phenomena are the long-term and short-term plasticities (LTP and STP, respectively), known as short-term memory (STM) and long-term memory (LTM) in the psychology literatures [23,39,40]. Biologically, STM holds the information that is quickly processed and encoded by the human brain; it persists for a few seconds to dozens of minutes.…”

Section: Resultsmentioning

confidence: 99%

Artificial nociceptor based on TiO2 nanosheet memristor

et al. 2021

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With the development of technology, the learning and memory functions of artificial memristor synapses are necessary for realizing artificial neural networks and neural neuromorphic computing. Owing to their high scalability performance, nanosheet materials have been widely employed in cellular-level learning, but the behaviors of nociceptor based on nanosheet materials have rarely been studied. Here, we present a memristor with an Al/TiO 2 /Pt structure. After electroforming, the memristor device showed a gradual conductance regulation and could simulate synaptic functions such as the potentiation and depression of synaptic weights. We also designed a new scheme that verifies the pain sensitization, desensitization, allodynia, and hyperalgesia behaviors of real nociceptors in the fabricated memristor. Memristors with these behaviors can significantly improve the quality of intelligent electronic devices. Data fitting showed that the high resistance and low resistance states were consistent with the hopping conduction mechanism. This work promises the application of TiO 2-based devices in next-generation neuromorphological systems.

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Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor

Cited by 43 publications

References 53 publications

Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

Robust and Low-Power-Consumption Black Phosphorus–Graphene Artificial Synaptic Devices

Artificial nociceptor based on TiO2 nanosheet memristor

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