Synchrotron photoemission investigation of the initial stages of fluorine attack on Si surfaces: Relative abundance of fluorosilyl species

McFeely, F. R.; Morar, J. F.; Shinn, Neal D.; Landgren, G.; Himpsel, F. J.

doi:10.1103/physrevb.30.764

Cited by 209 publications

(48 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Early investigations looked at the chemisorption of fluorine on clean Si surfaces (71), while subsequent work looked at more highly reacted surfaces (72,73). Studies of the gaseous reaction products generated by the spontaneous etching of Si by fluorine also contributed greatly to the understanding of silicon-fluorine chemistry by complementing the investigations of the surface products (74,75).…”

Section: Introductionmentioning

confidence: 99%

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Simpson

Yarmoff

1996

Annu. Rev. Phys. Chem.

View full text Add to dashboard Cite

It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF 2 , Cl 2 , Br 2 , and I 2 ) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This review examines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.

show abstract

Section: Introductionmentioning

confidence: 99%

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Simpson

Yarmoff

1996

Annu. Rev. Phys. Chem.

View full text Add to dashboard Cite

show abstract

“…This splitting is similar to, but larger than, the Si 2p splitting observed in H-intercalated graphene. 4 The observed chemical shift is much smaller than observed for SiF species, 18 indicating a relatively weak charge transfer from the Si atoms.…”

mentioning

confidence: 99%

“…[4][5][6][7] Samples were fluorinated following a similar method to McFeely et al 18 whereby buffer layer samples are placed in a reaction chamber with a XeF 2 crystal and heated to 200°C for 2 h, leading to the dissociation of the XeF 2 and the liberation of reactive fluorine atoms. This method has previously been used to study the interaction between fluorine and silicon surfaces 18 as well as fluorine and graphene [11][12][13][14] and normally leads to the formation of C-F bonds with the graphene layer. If a sacrificial piece of molybdenum is included in the reaction chamber, an entirely different reaction is promoted, whereby the F atoms bond not to the buffer layer C atoms, but instead to the interfacial Si atoms, as discussed below.…”

mentioning

confidence: 99%

Highly p-doped epitaxial graphene obtained by fluorine intercalation

Walter

Jeon

Bostwick

et al. 2011

Applied Physics Letters

146

115

View full text Add to dashboard Cite

Metal nanoantenna plasmon resonance lineshape modification by semiconductor surface native oxide J. Appl. Phys. 112, 044315 (2012) Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures Appl. Phys. Lett. 101, 091601 (2012) On the mechanisms of energy transfer between quantum well and quantum dashes J. Appl. Phys. 112, 033520 (2012) Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum-well hybrid structures

show abstract

“…3,4 Initially there was some disagreement on the thickness of this layer. From high resolution XPS-experiments it was estimated to be 4 monolayers of fluorine atoms, 5 in which the unit monolayer ͑ML͒ is defined as the surface density of the sample studied ͓Si͑100͒: 1 MLϭ6.86ϫ10 18 m Ϫ2 ].…”

Section: Introductionmentioning

confidence: 99%

Si/XeF2 etching: Temperature dependence

Vugts

Verschueren

Eurlings

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The temperature dependence of the Si͑100͒/XeF 2 etch reaction is studied quantitatively in a molecular beam setup. At a sample temperature of 150 K the reaction probability reaches unity initially, after which the XeF 2 condenses on the surface and blocks the etching process. For increasing temperatures the XeF 2 reaction probability initially decreases from 100% at 150 K down to 20% around 400 K, but for temperatures above 600 K it increases again up to 45% at 900 K. In a simple reaction scheme the high etch rate at low temperatures is explained by a XeF 2 -precursor, with an activation energy for desorption of 32Ϯ4 meV. Furthermore the increased etch rate at high temperatures is explained by the desorption of SiF 2 with an activation energy of 260Ϯ30 meV. The steady-state fluorine content of the SiF x reaction layer, measured using thermal desorption spectroscopy, reaches a maximum of 5.5 monolayers at 300 K. For increasing temperatures it decreases to a submonolayer coverage above 700 K. The temperature dependence of the formation of the reaction layer is described well by including the XeF 2 -precursor in a previously developed adsorption model.

show abstract

Synchrotron photoemission investigation of the initial stages of fluorine attack on Si surfaces: Relative abundance of fluorosilyl species

Cited by 209 publications

References 18 publications

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Highly p-doped epitaxial graphene obtained by fluorine intercalation

Si/XeF2 etching: Temperature dependence

Contact Info

Product

Resources

About