Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

Abstract

To simultaneously obtain information on both the electrical properties and the origin of defects, we have developed synchrotron-radiation deep level transient spectroscopy (SR-DLTS) and applied it to characterization of a metal/insulator Si structures. We have confirmed that SR-DLTS can provide element selective information of defects with by using the x-ray absorption edge for each element. In the Al∕AlN∕Si heterostructure, we detected two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84eV, respectively. We found that HT1 consists of continuous levels just above the valence band and is related to Si atoms at the AlN∕Si interface, whereas HT2 is a discrete level in the AlN film and related to both N and Al.

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

“…[10,11]. In comparison to the widely used C-DLTS method, [12,13] the characteristics of trapped charge transient process are measured using the Q-DLTS method after cycle bias pulse application. The cycle DLTS algorithm used in our isothermal Q-DLTS method is different from that proposed in Ref.…”

Trap‐sensitive relaxation of hot carriers in ZnO:Cu,Al

“…If there are many possible defects, the identification becomes ambiguous [1]. Recently, a new experimental method appeared [2], allowing the identification of the chemical elements in the defect structure by using local transition probabilities from core levels into the defect state, by measuring transients of capacitance excited by synchrotron radiation. The excitation has been performed using a wide spectrum (about 15 eV wide), rather than a narrow one centered at the probable trap binding energy.…”