Synchrotron radiation investigations of the Sr2MgSi2O7:Eu2+,R3+ persistent luminescence materials

Aitasalo, T.; Hassinen, Jukka; Hölsä, Jorma; Laamanen, Taneli; Lastusaari, Mika; Malkamäki, Marja; Niittykoski, Janne; Novák, P.

doi:10.1016/s1002-0721(08)60283-5

Cited by 54 publications

(33 citation statements)

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“…[2][3][4] The theoretical modelling of such phosphors is not free of puzzling technical concerns. Numerous studies related not only to the gigantic size-problem encountered, 5 like in the case of Eu…”

Section: +mentioning

confidence: 99%

The angular overlap model extended for two-open-shell f and d electrons

Ramanantoanina

Urland

Cimpoesu

et al. 2014

Phys. Chem. Chem. Phys.

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We discuss the applicability of the Angular Overlap Model (AOM) to evaluate the electronic structure of lanthanide compounds, which are currently the subject of incredible interest in the field of luminescent materials. The functioning of phosphors is well established by the f-d transitions, which requires the investigation of both the ground 4f n and excited 4f nÀ1 5d 1 electron configurations of the lanthanides. The computational approach to the problem is based on the effective Hamiltonian adjusted from ligand field theory, but not restricted to it. The AOM parameterization implies the chemical bonding concept.Focusing our interest on this interaction, we take the advantages offered by modern computational tools to extract AOM parameters, which ensure the transparency of the theoretical determination and convey chemical intuitiveness of the non-empirical results. The given model contributes to the understanding of lanthanides in modern phosphors with high or low site symmetry and presents a non-empirical approach using a less sophisticated computational procedure for the rather complex problem of the ligand field of both 4f and 5d open shells.

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Section: +mentioning

confidence: 99%

The angular overlap model extended for two-open-shell f and d electrons

Ramanantoanina

Urland

Cimpoesu

et al. 2014

Phys. Chem. Chem. Phys.

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“…This makes it a versatile tool to study persistent luminescent materials since the dopant concentration will usually be very low. [18][19][20][21][22][23][24][25][26][27][28] …”

Section: Introductionmentioning

confidence: 99%

The importance of inversion disorder in the visible light induced persistent luminescence in Cr³⁺doped AB₂O₄(A = Zn or Mg and B = Ga or Al)

Basavaraju

Priolkar

Gourier

et al. 2015

Phys. Chem. Chem. Phys.

136

110

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Cr 3+ doped spinel compounds AB 2 O 4 with A=Zn, Mg and B=Ga, Al exhibit a long near infrared persistent luminescence when excited with UV or X-rays. In addition, persistent luminescence of ZnGa 2 O 4 and to a lesser extent MgGa 2 O 4 , can also be induced by visible light excitation via 4 A 2 → 4 T 2 transition of Cr 3+ , which makes these compounds suitable as biomarkers for in vivo optical imaging of small animals. We correlate this peculiar optical property with the presence of antisite defects, which are present in ZnGa 2 O 4 and MgGa 2 O 4 . By using X-ray absorption fine structure (XAFS) spectroscopy, associated with electron paramagnetic resonance (EPR) and optical emission spectroscopy, it is shown that an increase in antisite defects concentration results in a decrease in the Cr-O bond length and the octahedral crystal field energy. A part of the defects are in the close environment of Cr 3+ ions, as shown by the increasing strain broadening of EPR and XAFS peaks observed upon increasing antisite disorder. It appears that ZnAl 2 O 4 , which exhibits the largest crystal field splitting of Cr 3+ and the smallest antisite disorder, does not show considerable persistent luminescence upon visible light excitation as compared to ZnGa 2 O 4 and MgGa 2 O 4 . These results highlight the importance of Cr 3+ ions with neighboring antisite defects in the mechanism of persistent luminescence exhibited by Cr 3+ doped AB 2 O 4 spinel compounds.

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“…This suggests a very important role for lattice defects, which may easily be produced during the reducing conditions used in the preparation of these materials. The existence of the defects has been confirmed by Electron Paramagnetic Resonance (EPR) measurements [9] and emission from undoped materials [10], but the defect chemistry of these materials still remains basically an open question.…”

Section: Introductionmentioning

confidence: 99%

Valence and environment of rare earth ions in CaAl2O4:Eu2+,R3+ persistent luminescence materials

Hölsä

Laamanen

Lastusaari

et al. 2010

Spectrochimica Acta Part B: Atomic Spectroscopy

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Synchrotron radiation investigations of the Sr2MgSi2O7:Eu2+,R3+ persistent luminescence materials

Cited by 54 publications

References 54 publications

The angular overlap model extended for two-open-shell f and d electrons

The angular overlap model extended for two-open-shell f and d electrons

The importance of inversion disorder in the visible light induced persistent luminescence in Cr³⁺doped AB₂O₄(A = Zn or Mg and B = Ga or Al)

Valence and environment of rare earth ions in CaAl2O4:Eu2+,R3+ persistent luminescence materials

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Synchrotron radiation investigations of the Sr2MgSi2O7:Eu2+,R3+ persistent luminescence materials

Cited by 54 publications

References 54 publications

The angular overlap model extended for two-open-shell f and d electrons

The angular overlap model extended for two-open-shell f and d electrons

The importance of inversion disorder in the visible light induced persistent luminescence in Cr3+doped AB2O4(A = Zn or Mg and B = Ga or Al)

Valence and environment of rare earth ions in CaAl2O4:Eu2+,R3+ persistent luminescence materials

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The importance of inversion disorder in the visible light induced persistent luminescence in Cr³⁺doped AB₂O₄(A = Zn or Mg and B = Ga or Al)