Synchrotron-radiation plane-wave topography I. Application to misfit dislocation imaging in III-V heterojunctions

Petroff, J. F.; Sauvage, M.; Riglet, P.; Hashizume, H.

doi:10.1080/01418618008239361

Cited by 94 publications

(18 citation statements)

References 16 publications

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“…The samples were irradiated either by a quasi-plane wave (wavelength 2 = 1.2378 A, spectral width A2/2--~7 x 10 -6, divergence AO,~ 10 -6 rad) IMPERFECTIONS IN (Ga 1 -xAlxAs)n 1-(GaAs)n2/GaAs SUPERLATTICES delivered by a non-tunable triple-reflection monochromator (Petroff, Sauvage, Riglet & Hashizume, 1980) or by a broader angular and spectral band, selected from the continuous SR spectrum by a singleplane-crystal monochromator [InP(001), reflections 004 or 002; GaAs(001), reflection 004]. The samples were irradiated either by a quasi-plane wave (wavelength 2 = 1.2378 A, spectral width A2/2--~7 x 10 -6, divergence AO,~ 10 -6 rad) IMPERFECTIONS IN (Ga 1 -xAlxAs)n 1-(GaAs)n2/GaAs SUPERLATTICES delivered by a non-tunable triple-reflection monochromator (Petroff, Sauvage, Riglet & Hashizume, 1980) or by a broader angular and spectral band, selected from the continuous SR spectrum by a singleplane-crystal monochromator [InP(001), reflections 004 or 002; GaAs(001), reflection 004].…”

Section: Methodsmentioning

confidence: 99%

Imperfections in (Ga_1−xAl_xAs)n₁–(GaAs)n₂/GaAs supperlattices as observed by X-ray diffraction techniques

Petroff¹,

Sauvage‐Simkin²,

Bensoussan³

et al. 1987

J Appl Cryst

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Growth imperfections in (Ga1−xAlxAs)n1–(GaAs)n2/ GaAs superlattices, grown on GaAs(001) substrates, have been investigated by X‐ray diffraction techniques coupling image and rocking‐curve recording. The use of a synchrotron radiation source has enabled topographic images formed with very weak superlattice reflections to be obtained. The intensity distribution across the sample surface observed in such images has revealed two different types of superlattice defects: either overall gradients of both the average composition and period or islands showing different composition and period from the surrounding material. Since these parameters control the optoelectronic properties and particularly the gap value it is of primary importance to grow homogeneous samples and to have a technique able to detect inhomogeneities such as the ones described in the present work.

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Section: Methodsmentioning

confidence: 99%

Imperfections in (Ga_1−xAl_xAs)n₁–(GaAs)n₂/GaAs supperlattices as observed by X-ray diffraction techniques

Petroff¹,

Sauvage‐Simkin²,

Bensoussan³

et al. 1987

J Appl Cryst

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“…Thus plane wave topography will be applied to any kind or any lattice spacing of crystals [21] as a poAA'erful method for characterization of single crystals.…”

Section: Discussionmentioning

confidence: 99%

Experimental and Theoretical Studies on X-ray Plane Wave Images of a Dislocation in the Laue Case

Ishida

Miyamoto

Ishikawa

et al. 1982

Zeitschrift Für Naturforschung A

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Dedicated to Prof. Hildebrandt on the occasion of his 60th birthdayPlane wave images of a dislocation in a silicon crystal were observed with (404) diffraction of MoKai over a wide angular range. The fine structures consisting of five kinds of sub-images and their angular dependences were well simulated by the wave theory taking into account the finite angular spread and pc'arization states of the incident beam. The mechanism of the image formation is studied in terms of interbranch scattering, Eikonal theory and kinematical diffraction.

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“…This technique has also been applied to x-ray topography, and high-resolution dislocation images were observed. [2][3][4] However, there have been few reports of further systematic studies on this technique. We have previously reported a preliminary study of the weak-beam method in Bragg-case x-ray topography.…”

Section: Introductionmentioning

confidence: 97%

Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography

Yamaguchi

Matsuhata

2010

Journal of Elec Materi

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Dislocations in 4H-SiC have been observed by x-ray topography in the Braggcase (reflection) geometry by means of a weak-beam technique. Using an x-ray beam with an angular divergence of 0.87 lrad, collimated by an asymmetric Si 331 reflection, a nearly intrinsic rocking curve of the SiC 0008 reflection was obtained. High-resolution contrast of threading screw dislocations by kinematical diffraction was observed under diffraction conditions that deviated from the rocking curve peak by 24 lrad. Threading screw dislocations running inside the wafer were projected onto the topograph. In addition, the sense of each screw dislocation was determined directly from the weak-beam image in consideration of lattice displacement around the dislocation.

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Synchrotron-radiation plane-wave topography I. Application to misfit dislocation imaging in III-V heterojunctions

Cited by 94 publications

References 16 publications

Imperfections in (Ga_1−xAl_xAs)n₁–(GaAs)n₂/GaAs supperlattices as observed by X-ray diffraction techniques

Imperfections in (Ga_1−xAl_xAs)n₁–(GaAs)n₂/GaAs supperlattices as observed by X-ray diffraction techniques

Experimental and Theoretical Studies on X-ray Plane Wave Images of a Dislocation in the Laue Case

Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography

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Synchrotron-radiation plane-wave topography I. Application to misfit dislocation imaging in III-V heterojunctions

Cited by 94 publications

References 16 publications

Imperfections in (Ga1−xAlxAs)n1–(GaAs)n2/GaAs supperlattices as observed by X-ray diffraction techniques

Imperfections in (Ga1−xAlxAs)n1–(GaAs)n2/GaAs supperlattices as observed by X-ray diffraction techniques

Experimental and Theoretical Studies on X-ray Plane Wave Images of a Dislocation in the Laue Case

Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography

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Product

Resources

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Imperfections in (Ga_1−xAl_xAs)n₁–(GaAs)n₂/GaAs supperlattices as observed by X-ray diffraction techniques

Imperfections in (Ga_1−xAl_xAs)n₁–(GaAs)n₂/GaAs supperlattices as observed by X-ray diffraction techniques