Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition

Park, Jae Young; Je, Jung Ho; Kim, Sang Sub

doi:10.1016/j.jcrysgro.2010.09.034

Cited by 2 publications

(1 citation statement)

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“…Such a large exciton binding energy allows stable existence of excitons and efficient excitonic emission at RT. Different growth methods, including pulsed laser deposition (PLD), , molecular beam epitaxy (MBE), , atomic layer deposition (ALD), , metal–organic chemical vapor deposition (MOCVD), , and vapor phase epitaxy (VPE) have been employed to grow ZnO films. Besides the most commonly adopted substrate, sapphire, other substrates or buffer layers with small lattice mismatch, such as γ-LiAlO 2, ScAlMgO 4 , and GaN − have been adopted to grow high-quality ZnO with low defect densities.…”

Section: Introductionmentioning

confidence: 99%

The Growth of an Epitaxial ZnO Film on Si(111) with a Gd₂O₃(Ga₂O₃) Buffer Layer

Lin

Liu

Yang

et al. 2011

Crystal Growth & Design

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High-quality (0001)-oriented ZnO epitaxial films have been grown by pulsed laser deposition on Si(111) buffered with a nanometer-thick Gd2O3(Ga2O3), GGO, layer. The structural characteristics of the ZnO epi-layers were studied by X-ray diffraction and transmission electron microscopy (TEM). The in-plane epitaxial relationship between the wurtzite ZnO, cubic GGO, and cubic Si follows {101̅0}ZnO∥{42̅2̅}Gd2O3 ∥{4̅22}Si and the ZnO/GGO interface can be described by the domain matching epitaxy. TEM contrast analysis reveals that the major defect structures in the ZnO films are edge-type threading dislocations and intrinsic basal plane stacking faults. All the ZnO epi-films studied are under a tensile biaxial strain, but no cracks were found. Temperature-dependent photoluminescence results show the excellent optical properties of the obtained ZnO layers, and the origins of the spectral features are discussed.

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