Synergetic effect of chelating agent and nonionic surfactant for benzotriazole removal on post Cu-CMP cleaning

Li, Yanlei; Liu, Yuling; Wang, Chenwei; Li, Yue

doi:10.1088/1674-4926/37/8/086001

Cited by 7 publications

(3 citation statements)

References 22 publications

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“…With the reduction of feature size and the increase of the integration level in an integrated circuit (IC), the requirement for cleanliness of the multilayer Cu wiring wafer surface becomes higher. Increasing attention has been paid to the CMP post cleaning process [1][2][3][4] . Benzotriazole (BTA), which acts as an anticorrosive agent in the polishing solution, is the main organic pollutant remaining after multilayer copper wiring CMP [5,6] .…”

Section: Introductionmentioning

confidence: 99%

Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

et al. 2018

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Benzotriazole (BTA), an anticorrosion agent of slurry, is the main organic pollutant remaining after CMP of multilayer copper wiring, and also the main removal object of post CMP cleaning. The adsorption of BTA onto the copper could form a dense Cu-BTA film, which makes the copper surface strongly passivated. According to this characteristic, quantitative analysis of BTA residue after cleaning is carried out by contact angle measurement and electrochemical measurement in this paper. A scanning electron microscope (SEM) with EDX was used to observe and analyze the BTA shape and elements. The efficiencies of organic alkali and inorganic alkali on the removal of BTA were studied. The corresponding reaction mechanism was also analyzed. The results show that the adsorption structure of Cu(I)-BTA cannot be destroyed in an alkaline environment with a pH less than 10; the effect of BTA removal by inorganic alkali is worse than that of the organic amine alkali with the coordination structure under the same pH environment; the FA/O II chelating agent with the fraction of 200 ppm can effectively remove BTA residue on the surface of copper wafer.

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Section: Introductionmentioning

confidence: 99%

Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

et al. 2018

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“…1 shows the schematic illustration of copper CMP in this experiment. This process can realize the requirements of surface topography imposed by decreasing lithographic depth of focus with increasing resolution [7,8] .…”

Section: Introductionmentioning

confidence: 99%

The stability of a novel weakly alkaline slurry of copper interconnection CMPfor GLSI

Yao¹,

Wang²,

Niu³

et al. 2018

J. Semicond.

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Chemical mechanical polishing (CMP) is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing slurry is a critical factor for realizing the high polishing performance such as high planarization efficiency, low surface roughness. The effect of slurry components such as abrasive (colloidal silica), complexing agent (glycine), inhibitor (BTA) and oxidizing agent (H2O2) on the stability of the novel weakly alkaline slurry of copper interconnection CMP for GLSI was investigated in this paper. First, the synergistic and competitive relationship of them in a peroxide-based weakly alkaline slurry during the copper CMP process was studied and the stability mechanism was put forward. Then 1 wt% colloidal silica, 2.5 wt% glycine, 200 ppm BTA, 20 mL/L H2O2 had been selected as the appropriate concentration to prepare copper slurry, and using such slurry the copper blanket wafer was polished. From the variations of copper removal rate, root-mean square roughness (Sq) value with the setting time, it indicates that the working-life of the novel weakly alkaline slurry can reach more than 7 days, which satisfies the requirement of microelectronics further development.

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“…[5][6][7][8] Among these defects, once particles are adsorbed on wafer surface, it is difficult to remove them during cleaning process, 9 which may cause device failure. [10][11][12][13][14][15] Recently, several researchers have focused on the issue of particle removal. Venkatesh 16 et al proposed that Tetra methyl ammonium hydroxide (TMAH) and arginine had good ability in removing silica particles from the copper surface and also yielded a lower surface roughness.…”

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confidence: 99%

Role of Penetrating Agent on Colloidal Silica Particle Removal during Post Cu CMP Cleaning

Yang

Liu

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

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The cleaning of copper surface after chemical mechanical planarization (CMP) is a critical step in integrated circuits (ICs) fabrication. Because the copper surface would be contaminated by particles, such as silica abrasives, which may cause device failure. The purpose of this work is to propose a kind of penetrating agent for particle removal. The cleaning solution consisted of FA/O II as a chelating agent and primary alcobol ethoxylate (PAE) as a penetrating agent. The removal of particles was characterized using scanning electron microscope (SEM). The wettability of the cleaning solutions as a function of PAE concentration was quantified using contact angle measurements. The effect of PAE on surface tension was also studied. The surface quality of copper after cleaning was monitored using atomic force microscope (AFM) measurements. The test results showed that PAE can reduce the surface tension of cleaning solutions and contact angle on surface. SEM results showed that PAE could effectively remove the silica particles and a lower surface roughness was obtained after cleaning. The cleaning performance on copper patterned wafers also showed that PAE could reduce defect count effectively.

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Synergetic effect of chelating agent and nonionic surfactant for benzotriazole removal on post Cu-CMP cleaning

Cited by 7 publications

References 22 publications

Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

The stability of a novel weakly alkaline slurry of copper interconnection CMPfor GLSI

Role of Penetrating Agent on Colloidal Silica Particle Removal during Post Cu CMP Cleaning

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