Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga<sub>2</sub>O<sub>3</sub>Deep-Ultraviolet Photodetector

Liu, Zeng; Du, Lifei; Zhang, Shaohui; Li, Lei; Xi, Zhao-Ying; Tang, Jin-Cheng; Fang, Junpeng; Zhang, Maolin; Yang, Lili; Li, Shan; Li, Peigang; Guo, Yufeng; Tang, W.H.

doi:10.1109/ted.2022.3195473

Cited by 30 publications

(11 citation statements)

References 52 publications

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“…The obtained values of α were 0.94 and 0.26 for the device under 254 and 365 nm light, respectively. The α values were both less than 1, which may be related to the high concentration of trapped states in the film, leading to strong carrier scattering and electron–hole recombination. , The characteristics of PDCR presented an increasing trend under two different UV illuminations. Moreover, the linear dynamic range (LDR) can verify the capability of detecting weak light, which can be expressed by the equation LDR = 20 .25em log ( I ph I normald ) Note that the device had a wide LDR above ∼96.8 dB under 254 nm light.…”

Section: Resultsmentioning

confidence: 94%

“…The α values were both less than 1, which may be related to the high concentration of trapped states in the film, leading to strong carrier scattering and electron−hole recombination. 44,45 The characteristics of PDCR presented an increasing trend under two different UV illuminations. Moreover, the linear dynamic range (LDR) can verify the capability of detecting weak light, which can be expressed by the equation 46…”

Section: Optoelectronic Performance Characterization Of Thementioning

confidence: 99%

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Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Chen,

Zeng,

Ding

et al. 2023

ACS Materials Lett.

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Ga 2 O 3 -doped thin films exhibit great potential in terms of optical and electronic properties. However, efforts are needed to meet the challenge of obtaining high-quality films by doping to achieve high-performance ultraviolet (UV) detection with tunable detection wavelengths. In this work, zinc-doped gallium oxide (ZGO) thin films with different Ga:Zn ratios were prepared by atomic layer deposition (ALD). During the film deposition, the plasma-enhanced ALD and thermal ALD were used alternately to grow Ga 2 O 3 and ZnO layers, respectively. The as-investigated 15-nm ZGO films showed an accurate doping ratio and excellent uniformity. The bandgap (E g ) was found to be well-tunable from 4.45 eV to 3.21 eV with increasing Zn content. The electronic band structures and the relationship between energy levels were analyzed in detail. Furthermore, metal−semiconductor-metal devices based on the Ga:Zn 9:1, 5:5, and 1:9 films were fabricated for UV detection. The ZGO thin film photodetectors (PDs) exhibited extremely low dark current and an obvious rejection ratio of the responsivity (R) of 254 and 365 nm light, showing the trend in accordance with the E g value. The Ga:Zn 5:5 PD presented high photo-to-dark current ratio of ∼7 × 10 4 , high R of 17.6 A/ W, and an excellent weak-light-detection ability shown by the linear dynamic range of ∼96.8 dB under 254 nm illumination. This work can fill the void of the doping research field and provide a feasible scheme for the development of a high-sensitivity photoelectric system.

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Section: Resultsmentioning

confidence: 94%

Section: Optoelectronic Performance Characterization Of Thementioning

confidence: 99%

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Chen,

Zeng,

Ding

et al. 2023

ACS Materials Lett.

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“…Assuming that all of the incident photons with h ν are absorbed at the surface, G can be expressed as follows , G = N pge N photon = normalΔ Q / normale normalΔ E ph / h ν where N pge is the number of photogenerated carriers passing through the electrode, N photon is the number of photons exposed to the device, Δ Q is the number of charges passing through the electrode per unit time, and Δ E ph is the illumination energy absorbed by the semiconductor per unit time. By dividing the unit time, formula can also be expressed as follows G = normalΔ Q / normale normalΔ E ph / h ν = ( I ph − I normald ) / normale italicSP / h ν …”

Section: Resultsmentioning

confidence: 99%

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga₂O₃ UV Detector via Impurity-Level Transition and Multiple Carrier Transport

Yao,

Liu,

Zhang

et al. 2023

ACS Appl. Electron. Mater.

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“…In order to characterize the DUV photoresponse in detail, photoresponsivity (R), detectivity (D * ), and external quantum efficiency (EQE) are introduced for specific characterization. They can be shown as [34] R =…”

Section: Resultsmentioning

confidence: 99%

One ε-Ga₂O₃-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity

Gao

et al. 2023

Chinese Phys. B

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In this work, the ε-Ga2O3 thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition (MOCVD) method, and then was used to fabricate a deep-ultraviolet (DUV) photodetector (PD). The ε-Ga2O3 thin film shown good crystal quality and decent surface morphology. Irradiated by a 254 nm DUV light, the photodetector displayed good optoelectronic performance and high wavelength selectivity, such as photoresponsivity (R) of 175.69 A/W, detectivity (D *) of 2.46×1015 Jones, external quantum efficiency (EQE) of 8.6×104% and good photocurrent-intensity linearity, suggesting decent DUV photo-sensing performance. At 5 V and under illumination with light intensity of 800 μW/cm2, the photocurrent gain is as high as 859 owing to the recycling gain mechanism and delayed carrier recombination; and the photocurrent gain decrease as the incident light intensity increase because of the recombination of photogenerated carriers by the large photon flux.

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Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga₂O₃Deep-Ultraviolet Photodetector

Cited by 30 publications

References 52 publications

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga₂O₃ UV Detector via Impurity-Level Transition and Multiple Carrier Transport

One ε-Ga₂O₃-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity

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Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3Deep-Ultraviolet Photodetector

Cited by 30 publications

References 52 publications

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

One ε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity

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Product

Resources

About

Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga₂O₃Deep-Ultraviolet Photodetector

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga₂O₃ UV Detector via Impurity-Level Transition and Multiple Carrier Transport

One ε-Ga₂O₃-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity