2021
DOI: 10.1021/acsaelm.1c01075
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Synergetic Enhancement of the Power Factor and Suppression of Lattice Thermal Conductivity via Electronic Structure Modification and Nanostructuring on a Ni- and B-Codoped p-Type Si–Ge Alloy for Thermoelectric Application

Abstract: In this study, the strategies of modifying the electronic structure, tuning carrier concentration, and nanostructuring were implemented to improve the power factor and reduce the thermal conductivity of Si−Ge simultaneously. The Si 0.65−x Ge 0.32 Ni 0.03 B x (x = 0.01, 0.02, 0.03, and 0.04) nanostructure was synthesized by high-energy ball-milling. Subsequently, a highpressure with low-temperature sintering process was carried out. A small amount of nickel (Ni) and boron (B) was introduced into Si−Ge to modify… Show more

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Cited by 21 publications
(5 citation statements)
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“…For the estimation of thermal conductivity (κ), thermal diffusivity was determined by means of laser flash analysis (Netzsch LFA 457). The temperature-dependent electrical transport properties ( S and ρ) for all of the materials were performed using a homemade setup. , …”
Section: Methodsmentioning
confidence: 99%
“…For the estimation of thermal conductivity (κ), thermal diffusivity was determined by means of laser flash analysis (Netzsch LFA 457). The temperature-dependent electrical transport properties ( S and ρ) for all of the materials were performed using a homemade setup. , …”
Section: Methodsmentioning
confidence: 99%
“…10 Fe 0 . 01 ) at 673 K. As a result of this combination of enhancements, the authors claim a maximum ZT of 1.88 at 873 K. In another study, Muthusamy et al [82] prepared Si 0 . 65x Ge 0 .…”
Section: Seebeck Coefficientmentioning
confidence: 94%
“…B dosage is considered for further reducing e  on the basis of the optimum batch (1 wt% of SiO 2 and 1 at% of B) due to that B acceptor dominates the carrier concentration in p-type SiGe [38]. Figure S8…”
Section: Carrier Concentration Regulation For E mentioning
confidence: 99%