To simultaneously assess the impact of molecular weight (M) and alkyl substituent variations of polymers on the structural and optoelectronic properties, herein, we conduct a systematic study of a series of poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np)-based polymers containing different alkyl substituents (2-hexyldecyl (HD), 2-octyldodecyl (OD), and 2-decyltetradecyl (DT) chains) and M's (low (L) and high (H)). All of the polymers produce almost identical energy levels, whereas their optical spectra show a clear dependence on M's and the alkyl substituents. Interestingly, increasing the alkyl substituent sizes of the polymers steadily increases the lamellar d-spacings (d), ultimately leading to a densely packed lamellar structure for PTIIGHD-Np. In addition, both H-PTIIGOD-Np and H-PTIIGDT-Np exhibit larger π-stacking crystallites than the corresponding low-M polymers, while for PTIIGHD-Np, their size increases in the low-M batch. Ultimately, L-PTIIGHD-Np shows the best hole mobility of 1.87 cm V s in top-gate and bottom-contact organic field-effect transistors (OFETs) with a poly(methyl methacrylate), which is nearly 1 order of magnitude higher than other polymers tested in this study. Our results demonstrate that the simultaneous M and alkyl substituent engineering of the polymers can optimize their film morphology to produce high-performance OFETs.