Herein, a 2D α‐In2Se3 nanosheet, a binary III–VI group compound semiconductor, is fabricated by liquid‐phase exfoliation method, and the photoelectric properties of α‐In2Se3 material are investigated in depth. It is found that α‐In2Se3 film exhibits significant conductivity, outstanding optical transmission, and a suitable work function. Combined with its smooth surface and preferable hydrophobicity, α‐In2Se3 film can efficiently facilitate hole transporting in the polymer solar cells (PSCs). Due to the aforesaid advantages, a 2D α‐In2Se3 nanosheet is used as a hole transport layer (HTL) in conventional PSCs for the first time, and a relatively high power conversion efficiency (PCE) of 9.58% is achieved with the structure of ITO/α‐In2Se3/PBDB‐T:ITIC/Ca/Al, which is comparable with poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)‐based devices (9.50%). Interestingly, it is demonstrated that the α‐In2Se3 film possesses excellent thermal stability in the range from room temperature to 280 °C, and a PCE of 9.35% is achieved without annealing treatment of α‐In2Se3 film, which exhibits a great potential of α‐In2Se3 for an annealing‐free approach. Furthermore, the incorporation of α‐In2Se3 HTL also remarkably enhances the long‐term stability of PSCs compared with PEDOT:PSS‐based devices. So, the results show that 2D α‐In2Se3 is a promising candidate to be an efficient and stable hole‐extraction layer.