Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Deng, Yuhui; Yang, Wanting; Lin, Xin; Liao, Ningtao; Zhu, Bingyan; Yang, Qingxiang; Jiang, Jie; Jiang, Limei

doi:10.1016/j.commatsci.2023.112036

Computational Materials Science

2023

DOI: 10.1016/j.commatsci.2023.112036

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Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Yuhui Deng

Wanting Yang

Xin Lin

et al.

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2024

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Cited by 3 publications

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Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Zhu,

Yang,

Deng

et al. 2024

Journal of Applied Physics

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This study analyzes the regulatory mechanism of oxygen vacancy concentration on tail-to-tail charged domain walls (T–T CDWs), along with the writing time, conduction current magnitude, and retention performance of through-type T–T CDWs. The research results show that the highest density and length of T–T CDWs are achieved when the oxygen vacancy concentration is 1 × 1020 cm−3. Moreover, the successful writing of through-type T–T CDWs is limited to a certain electric field range, which is controlled by oxygen vacancy concentration. An increase in the oxygen vacancy concentration leads to a decrease in the maximum and minimum threshold electric fields required for writing through-type charged domain walls. The writing time and conductivity of through-type T–T CDWs determine the information writing speed and signal strength of domain wall memories, and the oxygen vacancy concentration also plays a regulatory role in both aspects. When the oxygen vacancy concentration is 1 × 1020 cm−3, the through-type T–T CDW exhibits the fastest writing speed, requiring only 8 ns. The magnitude of the conduction current of through-type T–T CDWs is directly proportional to the oxygen vacancy concentration. The through-type T–T CDWs formed by the aggregation of oxygen vacancies exhibit excellent retention performance, making them highly promising for applications in ferroelectric domain wall memories. Our research demonstrates that oxygen vacancies have a significant regulatory effect on the morphology and current response of charged domain walls, opening up new avenues for the study of domain wall memories.

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Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Zhu,

Yang,

Deng

et al. 2024

Journal of Applied Physics

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Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO₂ thin films

Chen 陈,

Liu 刘

et al. 2024

Chinese Phys. B

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Ferroelectric HfO2 have attracted much attention owing to their superior ferroelectricity at an ultra-thin thickness and good compatibilities with Si-based complementary-metal-oxide-semiconductor (CMOS) technology. However, the crystallization of polar orthorhombic phase (o-phase) HfO2 is less competitive, which greatly limits the ferroelectricity of as-obtained ferroelectric HfO2 thin films. Fortunately, the crystallization of o-phase HfO2 can be thermodynamically modulated via interfacial stress engineering. In this paper, the growth of improved ferroelectric Al doped HfO2 (HfO2:Al) thin films on (111)-oriented Si substrate have been reported. Structural analysis has suggested that non-polar monoclinic HfO2:Al grown on (111)-oriented Si substrate suffered from a strong compressive strain, which promoted the crystallization of (111)-oriented o-phase HfO2 in the as-grown HfO2:Al thin films. In addition, the in-plane lattice of (111)-oriented Si substrate matches well with that of (111)-oriented o-phase HfO2, which further thermally stabilized the o-phase HfO2. Accordingly, an improved ferroelectricity with a remnant polarization (2P r) of 26.7 μC/cm2 has been obtained. The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO2 thin films.

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Optimization of Ferroelectric Properties of HfO₂-Based Thin Films by Ion Irradiation

Liao,

Lin,

Zhu

et al. 2024

IEEE Trans. Nucl. Sci.

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Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Cited by 3 publications

References 37 publications

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO₂ thin films

Optimization of Ferroelectric Properties of HfO₂-Based Thin Films by Ion Irradiation

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Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Cited by 3 publications

References 37 publications

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO2 thin films

Optimization of Ferroelectric Properties of HfO2-Based Thin Films by Ion Irradiation

Contact Info

Product

Resources

About

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO₂ thin films

Optimization of Ferroelectric Properties of HfO₂-Based Thin Films by Ion Irradiation