“…However, thermoelectric performance of thin film counterpart does not align with their bulk form due to different fabrication process lead to dissimilar electronic and thermal transport properties . To enhance the thermoelectric properties of thin films, developing metal–semiconductor (M–Sc)-based composites offers a viable approach, extensively researched in the bulk forms of various thermoelectric materials. − These composites effectively boost the electrical conduction through mechanisms such as carrier channeling, and carrier injection simultaneously suppresses phonon conduction by enhancing interfacial phonon scattering to achieve enhanced thermoelectric performance. ,, The influence of the metallic phase on σ is contingent upon the band structure of the matrix, the potential energy barrier at the interface between the two phases, and the electrical and thermal transport properties of the metallic phase. Also, the morphology, amount, and physical characteristics of the guest phase play a critical role in determining the resulting thermoelectric transport properties. ,− Previous studies had demonstrated the effect of metallic nanostructures in TE materials like (Bi,Sb) 2 (Te,Se) 3 , CoSb 3 , and MnSi 1.787 Al 0.0138 , where the selection of metallic inclusions with distinct work functions provides the perspective of a tunable barrier at the interface, promoting the electronic transport to tailor the TE properties.…”