Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Abstract

Hong-Xia(郭红霞) a)b) , Zhang Feng-Qi(张凤祁) a) , Zhao Wen(赵 雯) a) , Wang Yan-Ping(王燕萍) a) , Zhang Ke-Ying(张科营) a) , Ding Li-Li(丁李利) a) , Fan Xue(范 雪) c) , Luo Yin-Hong(罗尹虹) a) , and Wang Yuan-Ming(王园明) a) a) State

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

“…Meanwhile, the SEU cross-section had a certain dependence on parameters such as test data patterns, irradiation test temperature, etc. [27][28][29][30][31][32].…”

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

“…Some researchers investigated the impact of ionizing radiation on SEU sensitivity of complementary metal oxide semiconductor (CMOS) devices and found that the SEU cross section can be substantially shifted by ionizing radiation. [7][8][9] Preliminary works about the TID and SEU effects on FRAM have been done separately in the past few decades. The results of TID experiments showed that the radiation tolerance of FRAM is much higher at static mode than that at dynamic mode [10] and the radiation response is dominated by the CMOS circuits.…”

Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

“…Energetic protons and heavy ions (HIs) in space can induce single event effects (SEEs) such as single event upsets (SEU) and single event latch-ups (SEL) in electronic devices [1][2][3][4][5]. Those effects can significantly damage the on-orbit safety of satellites and spacecraft.…”