Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

Abstract

The synergistic effects on the 0.18 µm PPD CISs induced by neutron displacement damage and gamma ionization damage are investigated. The typical characterizations of the CISs induced by the neutron displacement damage and gamma ionization damage are presented separately. The CISs are irradiated by reactor neutron beams up to 1 × 1011 n/cm2 (1 MeV neutron equivalent fluence) and 60Co γ-rays up to the total ionizing dose level of 200 krad(Si) with different sequential order. The experimental results show that the mean dark signal increase in the CISs induced by reactor neutron radiation has not been influenced by previous 60Co γ-ray radiation. However, the mean dark signal increase in the CISs induced by 60Co γ-ray radiation has been remarkably influenced by previous reactor neutron radiation. The synergistic effects on the PPD CISs are discussed by combining the experimental results and the TCAD simulation results of radiation damage.

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

“…In practical radiation environments, ID and DD invariably act in concert rather than in isolation. This implies that devices are concurrently subjected to both types of irradiation, giving rise to a synergistic effect (SE) of ID and DD [7][8][9]. The current research on SE of BJT devices is primarily concentrated in two aspects: The first aspect focuses on investigating the ionization/displacement SEs induced by a separate class of particles, such as electrons [10], protons [11], or ions [12,13] within the BJT.…”